Effects of Hydrogen Ion Implantation and Thermal Annealing on Structural and Optical Properties of Single-crystal Sapphi
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Effects of Hydrogen Ion Implantation and Thermal Annealing on Structural and Optical Properties of Single-crystal Sapphire. William T. Spratt1, Mengbing Huang1,*, Chuanlei Jia2, Lei Wang3, Vimal K. Kamineni1, Alain C. Diebold1, Richard Matyi1, and Hua Xia4 1 College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, NY 12203, U.S.A. 2 College of Physics Science and Technology, China University of Petroleum, Dongying, Shandong 257061, P. R. China. 3 School of Physics and Microelectronics, Shandong University, Jinan, Shandong 250100, P. R. China 4 RF and Photonics Laboratory, General Electric Global Research Center, Niskayuna, NY 12309, U.S.A. * Email: [email protected] ABSTRACT Due to its outstanding thermal and chemical stability, single-crystal sapphire is a crucial material for high-temperature optical sensing applications. The potential for using hydrogen ion implantation to fabricate stable, high temperature optical waveguides in single crystal sapphire is investigated in this work. Hydrogen ions were implanted in c-plane sapphire with energies of 35 keV and 1 MeV and fluences 1016-1017/cm2. Subsequent annealing was carried out in air at temperatures ranging from 500ÛC to 1200ÛC. Complementary techniques were used to characterize the samples, including ellipsometry and prism coupling to examine optical properties, Rutherford backscattering/ion channeling for crystal defects, and nuclear reaction analysis for hydrogen profiling. Several guiding modes were observed in H-implanted (1 MeV) samples annealed above 800ÛC through prism coupling, and a maximum index modification of 3% was observed in the 35 keV samples and 1% in the 1 MeV samples through ellipsometry, with the 1 MeV index variation being confirmed through prism coupling. The possible causes of the index modifications, such as H related defects, as well as implications for tailoring the refractive index of sapphire are discussed. INTRODUCTION Optical waveguides are critical components of many diverse applications in integrated optics, ranging from optical computation, to photonic power delivery, to optical sensing. Increasingly these components are being used in harsh environments, supplanting existing technologies. Many methods exist for fabricating waveguides, of which ion implantation is an established technique for modifying the optical properties of materials. It allows a high degree of control over the location and extent of the modification while leaving other areas unmodified, which makes it an advantageous method for the fabrication of optical waveguiding structures in many materials[1,2]. Of particular interest are ionic crystals, such as sapphire (Al2O3), which have already been modified to serve as low loss optical and optoelectronic structures[3]. In addition to promising optical properties, sapphire possessed excellent thermal and chemical properties.
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Studies have shown that the implantation of lighter ions in sapphire, such as H and He, induce a negative index change, and that heavier ions, such as O or Si
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