Effects of Sputtered Particle Energy on the Properties of SiO 2 Films
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EFFECTS OF SPUTTERED PARTICLE ENERGY ON THE PROPERTIES OF SiO2 FILMS YASUNORI TAGA AND TAKESHI OHWAKI Toyota Central Research and Development Laboratories, Nagakute-cho, Aichi-gun, Aichi-ken 480-11, Japan
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ABSTRACT The secondary ion energy distributions (SIED) emitted from Si under various conditions of targets (Si, Si0 2 ) and primary ions (Ar+, 0+) were measured and the thin Si0 2 films were deposited by magnetron sputtering techniques under the corresponding conditions to the SIED experiments. The most probable energies of silicon oxygen cluster ions of SimOn+ (m, n=l, 2,...) are equal to those of Al+ thermal ions, while those of Sik+ (k=l, 2,...) remain unchanged with the introduction of oxygen in chamber during Ar+ ion bombardment. The currentvoltage plots of Si0 2 films are also measured and found to be influenced by the deposition conditions. It is concluded that the differences in current-voltage characteristics of Si0 2 films prepared under various sputtering conditions can be reasonably explained in terms of the changes in the most probable energy of the sputtered particles. INTRODUCTION In recent years, significant improvements in thin film quality control have been achieved by sputter deposition or ion-assisted technology [11-[5]. The key feature of these sophisticated techniques is the use of the ions to sputter deposit material and to add activation energy or chemical activity to the growing film, or combinations of these effects. The ions may be used in a plasma region or high vacuum region (ion beam techniques). The influence of the kinetic energy of sputtered ions on thin film formation ranges from simple substrate cleaning for enhanced adhesion to morphological changes and the simulation of epitaxial growth [6]. Most work has been concerned with studying the changes in film stress, crystal structure, and composition [7],[8]. These peculiar features of sputtering technology for thin film deposition is generally explained in terms of the energy of sputtered particles. We have reported the results of the measurements of energy distribution of secondary ions from Si under 02 and N2 ion bombardment [4],[9],[10]. A complete understanding of secondary ion emission requires measurements of secondary ion yields as well as their energy distributions. Measurements of secondary ions energy distribution seem to be a particularly suitable technique for characterizing sputtering mechanism. The bombarding energy of the primary ions produced in a plasma region or high vacuum region is usually of the order of KeV or less. Therefore, the values of the most probable energy (Em) of the SIED may be the most dominant parameter for the characterization of the ejection process by sputtering. In this paper, we describe the effects of sputtered particle energy on the various properties of Si0 2 films.
Mat. Res. Soc. Symp. Proc. Vol. 126. '1g9gMaterials Research Society
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EXPERIMENTAL PROCEDURE Measurements of the energy distribution of sputtered ions were performed with a UHV-SIMS (Ultra high vacuum - Secondary
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