Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
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Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling Luana S. Araujo1, Olivia Berengue2, Maurício Baldan3, Neidenei Ferreira3, João Moro4 and Adenilson Chiquito1 1 NanO LaB-Departamento de Física, Universidade Federal de São Carlos, SãoCarlos, São Paulo, Brazil. 2 Faculdade de Engenharia de Guaratinguetá, Universidade Estadual Júlio de Mesquita Filho , Guaratinguetá , São Paulo, Brazil. 3 Laboratório Associado de Sensores e Materiais, LAS/INPE, São José dos Campos, São Paulo, Brazil. 4 Instituto Federal de Educação, Ciência e Tecnologia de São Paulo, Bragança Paulista, São Paulo, Brazil. ABSTRACT Doped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metaldiamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film. INTRODUCTION Diamond has long been seen as a material of large interest for fabrication of active electronic devices. The semiconducting properties of diamond like breakdown field of 10 MVcm-1 for pure single crystal diamond and thermal conductivity larger than 2000 Wm -1K-1 [1, 2] makes it suitable for high power and high frequency electronics. The large bandgap associated with diamond of 5.47eV makes it suitable for high voltage operation. Therefore there is a current interest in achieving better quality undoped and doped films. If current difficulties with growth/doping process, carrier traps and recombination centers could be overcome then diamond could fill requirements for a niche market requiring robust electronics for operation in harsh environments. The performance of diamond based device can be affected by those defects and also by hydrogen-terminated surface present in as-grown diamond samples. This conductive layer of hydrogen-terminated diamond has profound influence on the formation of metal-diamond interfaces and on the extraction of characteristics of the diamond films. This conductive layer affects the distribution of charges at diamond surface, also altering the Schottky barriers [3]. In order to produce a reliable device with the active regions well-established we must study the susceptibility of the diamond properties to specific surface conditions. This work is aimed on investigating diamond films before and after an O2 plasma treatment used as a cleaning process for the surface. The electronic and electrochemical properties such as the capacitancevoltage measurements are strongly dependent on the oxidation treatment [4,5,6], which could be 1
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