Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G3.30 (1999) Abstract Electron beam induced electromigration of ON' and H' impurities in unintentionally n-doped GaN was investigated using cathodoluminescence (CL) kinetics profiling, CL imaging of regions pre-irradiated with a stationary electron beam, and wavelength dispersive x-ray spectrometry (WDS). The presented results (i) illustrate induced impurity diffusion in wide bandgap semiconductors, (ii) provide experimental evidence for the (V~a-ON)2- model of yellow luminescence in GaN with low Si content', (ii) confirm the roles of 0 in frequently reported bound exciton and donor-acceptor pair emissions and (iv) suggest the involvement of ON' and hydrogenated gallium vacancies in a blue emission in autodoped GaN.
Introduction CL is light emitted due to recombination of e-h pairs generated by energetic electrons. CL kinetics profiles can be obtained by recording the CL signal as a sample is irradiated with the electron beam in a scanning electron microscope (SEM). Electron beam irradiation of an uncoated semiconductor or insulator produces a positive region at the beam impact point due to a loss of charge through the emission of secondary electrons. The positive region (of
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