Electron Emission from Gated Diamond Emitter Array
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ELECTRON EMISSION FROM GATED DIAMOND EMITTER ARRAY Seung -Chul Ha, Dae-Hwan Kang, Byung-Sung Kim, Seok-Hong Min%, and Ki-Bum Kim. Division of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea. *Research Institute of Advanced Materials, Seoul National University, Seoul, 151-742, Korea. ABSTRACT A novel processing sequence for the formation of gated diamond field emitter arrays (triode system) is proposed and the feasibility is tested by investigating the field emission property. The processing scheme is based on the selective deposition of diamond using the well established nucleation enhanced process on silicon substrate, so called bias enhanced nucleation (BEN). Selective deposition of diamond using the same process was also demonstrated on titanium nitride (TIN) electrode layer. Our preliminary results show that the diamond field emitter is turned on at around 97 V/jtm with the current level of about several [tA. INTRODUCTION Field emission display (FED) is evolving as one of the promising techniques for the future generation of flat panel displays (FPD). In making a successful FED, one of the critical issues is the fabrication of emitter arrays which not only generate a high electric current at relative low operating voltages but also are stable and reliable under the operation conditions. FED with emission current density as high as 10 - 1500A/cm2 have been achieved in metal tip emitters[l] and silicon tip arrays[2], respectively. However the electrical fields needed for triggering the field emission of these devices were rather high. Moreover, their performance degrades rapidly due to thermal and chemical effects[3]. It was suggested that diamond field emitters will overcome aforementioned problems due to marvelous properties of diamond such as large thermal conductivity, high hardness, chemical inertness, and negative electron affinity[4]. Because of these properties, diamond field emitters have been widely investigated for applications as FED devices[5-8]. So far, excellent field emission behavior, i.e., low turn-on field (
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