Electronic Defects and Device Performance in CuGaSe 2 Solar Cells
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1012-Y12-27
Electronic Defects and Device Performance in CuGaSe2 Solar Cells J. Jedediah Rembold1, Todd W. Curtis1, Jennifer T. Heath1, David L. Young2 , Steve W. Johnston2, and William N. Shafarman3 1 Linfield College, McMinnville, OR, 97128 2 National Renewable Energy Laboratory, Golden, CO, 80401 3 Institute of Energy Conversion, University of Delaware, Newark, DE, 19716 ABSTRACT The electronic and materials properties of two series of wide-bandgap solar cells with Cupoor CuGaSe2 (CGS) absorbers have been studied, to better understand limitations on the device performance. One series of samples displayed distinct lateral non-uniformities in Cu/Ga ratio, Na content, and thickness. The C-V data on these samples suggested the presence of a distinct band of near-interface defect states. Although the second series of samples appeared uniform and C-V results did not indicate the presence of near-interface defect states, J-V-T results show Voc(0T)
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