Electronic Properties of Ga(In)NAs Alloys
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Electronic Properties of Ga(In)NAs Alloys I. A. Buyanova, W. M. Chen and B. Monemar MRS Internet Journal of Nitride Semiconductor Research / Volume 6 / January 2001 DOI: 10.1557/S1092578300000144, Published online: 13 June 2014
Link to this article: http://journals.cambridge.org/abstract_S1092578300000144 How to cite this article: I. A. Buyanova, W. M. Chen and B. Monemar (2001). Electronic Properties of Ga(In)NAs Alloys . MRS Internet Journal of Nitride Semiconductor Research, 6, pp e2 doi:10.1557/S1092578300000144 Request Permissions : Click here
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MRS
Internet Journal Nitride Semiconductor Research
Electronic Properties of Ga(In)NAs Alloys I. A. Buyanova1, W. M. Chen1 and B. Monemar1 1Department
of Physics and Measurement Technology, Linköping University,
(Received Thursday, November 9, 2000; accepted Thursday, January 25, 2001)
A brief review on the present knowledge of the electronic properties of the Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental perspective. The discussion is focused on Ga(In)NAs with low N composition (< 10 %), where a large amount of experimental work has been done. Important fundamental electronic properties of the material system are analyzed with the emphasis on the nature of the giant band gap bowing in the alloy and nitrogen-induced modifications of the electronic structure of the conduction band. The current knowledge of the key material parameters, relevant for the device applications, such as electron effective mass, recombination processes and band alignment in Ga(In)NAs/GaAs heterostructures, is also reviewed.
1
Introduction
Nitrogen containing III-V-V’ alloys, such as GaN(In)As and GaN(In)P have in recent years emerged as a subject of considerable theoretical and experimental research interest, due to their very unique physical properties and a wide range of possible device applications. Unlike all conventional ternary III-V semiconductor alloys, such as AlGaAs, GaInAs, GaInP, etc., where the band gap energy of the alloy can be reasonably approximated as a weighted linear average of the band gaps of the parental binary compounds, N-containing anion-mixed III-V alloys exhibit a huge bowing in the band gap energy [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11]. For example, the addition of only 2 % of nitrogen to GaAs causes a dramatic decrease in band gap energy by about 0.4 eV. These remarkable fundamental properties of the GaN(In)As ternary and quaternary alloys, in combination with the possibility to vary the lattice constant of the alloy material in a wide range by optimizing the N content, provide an opportunity to tailor the material properties for desired applications in optoelectronic devices based on III-V materials. First of all, the incorporation of nitrogen has made possible to
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