Electronic Structure of Si/InAs Composite Channels
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Electronic Structure of Si/InAs Composite Channels Marta Prada, Neerav Kharche, and Gerhard Klimeck School of Electrical and Computer Engineering, Purdue University, 465 Northwestern Avenue, West Lafayette, IN, 47907
ABSTRACT This paper reports electronic structure calculations on composite channels, consisting of indium arsenide grown on the technologically relevant (001), (011) and (112)-orientated silicon surfaces. The calculations are performed with NEMO 3-D, where atoms are represented explicitly in the sp3d5s* tight-binding model. The Valence Force Field (VFF) method is employed to minimize the strain. NEMO 3-D enables the calculation of localized states in the quantum well and their dispersion in the quantum well plane. From this dispersion, the bandgap, its direct or indirect character, and the associated effective masses of the valence and conduction band can be determined. Such composite bandstructure calculations are demonstrated here for the first time. The numerical results presented here can then be included in empirical device models to estimate device performance. Pure InAs QW appears to be a direct bandgap material, with a relatively small gap and effective masses of about one order of magnitude smaller than for pure Si QW of equivalent thickness. Si, on the other hand, has a larger bandgap and has superior thermal and mechanical properties. Thus heteroepitaxy of both components is expected to yield a highly optimized overall system. For samples grown along the (001) direction, Si is a direct bandgap material, and deposition of an InAs 3nm layer reduces substantially the hole effective mass and slightly the electronic mass, decreasing the magnitude of the gap. Along the (011) and (112)-growth direction, Si QWs are indirect bandgap material, and deposition of a few InAs layers suffies to make the new material a direct-bandgap heterostructure, decreasing significantly the electronic effective mass. INTRODUCTION As reduction of feature sizes for semiconductor devices continues in order to achieve higher integration densities, higher speed, lower power consumption and lower costs, channel thicknesses of only a few nanometers are necessary to accomplish near future industry demands. New ultra-thin body (UTB) geometries must be explored to ensure electrostatic control, for which the atomistic texture makes the use of effective mass approach questionable, and an atomistic treatment of the device becomes essential. Here we apply the semi-empirical tight-binding theory to semiconductor thin films grown on the three most relevant orientations. Atoms are represented explicitly in the Valence Force Field (VFF) method [1] to minimize the strain and in the sp3d5s* tight-binding model. Band structure effects play a crucial role in nanoscale MOSFETs [2]. NEMO 3-D [3] enables the calculation of localized states in the quantum well and their dispersion in the quantum well plane. From this dispersion, the bandgap, its direct or indirect character, and the associated effective masses of the valence and co
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