Emission Wavelength Control of Si-rich SiO x MOSLED by Detuning Vapor Fluence and Plasma Power During PECVD Growth
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1074-I10-20
Emission Wavelength Control of Si-rich SiOx MOSLED by Detuning Vapor Fluence and Plasma Power During PECVD Growth Bo-Han Lai1, Yi-Hao Pai1, Chi-Wee Liu2, and Gong-Ru Lin1 1 Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan 2 Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan ABSTRACT Photoluminescence (PL) intensity and wavelength control of Si-rich SiOx film and Si-rich SiOx based MOSLED achieved by detuning plasma power (RF power) during plasma-enhanced chemical vapor deposition (PECVD) growth is investigated. The peak of PL spectrum blueshifts from 780 to 400 nm by modifying the RF power form 20 to 70 W during PECVD growth. The average sizes of Si nanocluster under RF power of 60 and 70W are 2.61 and 1.83 nm, respectively. The EL color of Si nanocrystal (nc-Si) based MOSLEDs can be tunable among orange-red, green and blue colors by growing the SiOx films with PECVD under different RF power. Under RF power from 50 to 70W, the turn-on voltage of nc-Si based MOSLEDs increases from 26 to 60 V, the optical power also increases from 1.6 W/cm2 to 9.7 W/cm2 and the power-current slope are 0.51, 3.24 and 62.92 mW/A, respectively. INTRODUCTION Since 1990, Canham has demonstrated that Si nanostructure may be useful for nextgeneration photonics due to its enhanced light emission at room temperature with respect to bulk Si or porous Si [1, 2]. After the discovery of bright photoluminescence (PL) in porous Si, research on light emission from Si nanostructure has been very impressive [3]. Nanocrystal Silicon embedded in SiO2 has been widely studied because the intense visible and near-IR photoluminescence (PL) was observed fromsuch a nanocomposite system. The SiO2 matrix is currently the host to offer high bandgap structure and confines the smalle-bandgap of silicon. The PL peak of this material and electroluminescence (EL) of the Si nanocrystal based metaloxide-semiconductor light-emitting diode (MOSLED) can be detuned by altering different fabrication methods. Versatile technologies have been proposed for fabricating nanocrystallite Si (nc-Si), such as electron-beam evaporation, RF-magnetron sputtering, Si-ion-implantation and plasma-enhanced chemical vapor deposition (PECVD). Most nc-Si based material formed by different processing methods have been shown to exhibit strong and distinct PL peaks in the blue-green band (415, 437, 470, and 490-540 nm) by electron-beam evaporation, the orange-red band (570, 600, 630 and 645 nm) by Si-ion-implantation , and the near-infrared region (710-800 nm) by plasma-enhanced chemical vapor deposition [4-7]. Ding et al. observed visible and infrared electroluminescence (EL) from a MOS structure with embedded nc-Si in the gate oxide around 460, 600, 740, and 1260 nm. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy [8]. But it
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