Energy Relaxation of Electrons in InGaN Quantum Wells
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INTRODUCTION
OVER the last decade GaN-based heterostructures have been one of the most actively investigated materials because of their outstanding features including large breakdown field and polarization-induced high sheet carrier densities over 1013 cm2[1,2] These coupled with the improvements in the material quality, optoelectronic applications like light emitting diodes (LED), lasers, and sensors have started to be studied extensively.[3,4] InxGa1xN alloy has a direct band gap and for the mole fractions (0 £ x £ 1), it corresponds to the visible range of the electromagnetic spectrum, It is therefore, one of the most investigated compounds for tandem solar cells, sensors, LEDs, and laser sources.[3–6] Furthermore, high electron mobility transistor (HEMT) structures where an InxGa1xN-channel with high sheet carrier density and enhanced confinement, inserted between the barrier and GaN layers have huge potential in high power millimeter-wave applications.[7] Also, it has been reported that HEMT structures with InxGa1xN-channels have improved current collapse behavior with improved low-frequency noise.[8] However, because of its alloy nature, 2DEG is subject to enhanced alloy-disorder scattering.[9] In order to BEYZA SARIKAVAK-LISESIVDIN, Lecturer, and SEFER BORA LISESIVDIN, Associate Professor, are with the Department of Physics, Faculty of Science, Gazi University, Teknikokullar, 06500 Ankara, Turkey, and also with the School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester CO4 3SQ, U.K. Contact e-mail: [email protected] NACI BALKAN, Professor, is with the School of Computer Science and Electronic Engineering, University of Essex, and also with the Department of Physics, Faculty of Science, Istanbul University, Vezneciler, 34134 Istanbul, Turkey. GOKHAN ATMACA and POLAT NARIN, Ph.D. Students, are with the Department of Physics, Faculty of Science, Gazi University. HUSEYIN CAKMAK, Research Engineer, is with the Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara, Turkey. EKMEL OZBAY, Professor, is with the Nanotechnology Research Center, Bilkent University, and also with the Department of Physics, Department of Electrical and Electronics Engineering, Bilkent University, 06800 Bilkent, Ankara, Turkey. Manuscript submitted April 16, 2014. Article published online 29 January 2015 METALLURGICAL AND MATERIALS TRANSACTIONS A
suppress the alloy-disorder scattering, an ultrathin InxGa1xN-channel has been proposed recently.[10] In order to evaluate the performance of devices with lm and sub lm dimensions where the application of a few Volts gives rise to electric field in excess of 101 kV/ cm hot electron transport must be considered.[11] There are number of studies about hot electron transport in the GaN-based heterostructures, especially AlGaN/ GaN and AlInN/GaN structures.[12–14] In addition to these studies and possible optoelectronic device applications, it becomes increasingly important to understand the non-equilibrium electron energy and mome
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