Epitaxial Formation and Characterization of CeO 2 Films
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le I The deposition parameters for different sources and substrates Substrate
Ttuhstrate
Deposition
Oxygen
Rate
Pressure Po 2
(°C)
(Torr)
_(As) LaALO3
Source
520-640
0.4-1.0
1-5x10- 5
580-720
0.5
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