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0911-B09-01

Epitaxial Growth and Characterization of SiC on Different Orientations Larry B. Rowland1, Canhua Li2, Greg T. Dunne1, and Jody A. Fronheiser1 1 GE Global Research, General Electric, One Research Circle, Niskayuna, NY, 12309 2 Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180-2786

ABSTRACT Background doping as well as intentional doping using nitrogen and trimethylaluminum have been investigated for 4H-SiC epitaxy on offcut Si face, C face, and a-axis substrates over a wide range of C:Si ratio. Smooth morphology can be obtained at a C:Si ratio of 2.0 on a-axis substrates but not on Si or C face material. Background doping levels of

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