Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition
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North Carolina State University, Raleigh, NC 27695-7916.
ABSTRACT AIN thin films have been grown epitaxially on Si(lll) and A12 03(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The 2 films deposited on silicon and sapphire at 750-800°C and laser energy density of - 2 to 3J/cm are epitaxial with an orientational relationship of AIN[0001]II Si[lll], AIN[21"0]IISi[01T] and AIN[0001]IIAl20 3 [0001], AIN[ T 2T0111 A120 3[0T"O] and AIN[10TO] 11A120312110]. The both AIN/Si and A1N/A12 03 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of 6 13 the films was about 5-6x10 f2-cm with a breakdown field of 5xl0 V/cm. We also found that the 0 2 films deposited at higher laser energy densities >1OJ/cm and lower temperatures
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