Epitaxial growth of semiconducting LaVO 3 thin films
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RAPID COMMUNICATIONS The purpose of this Rapid Communications section is to provide accelerated publication of important new results in the fields regularly covered by Journal of Materials Research. Rapid Communications cannot exceed four printed pages in length, including space allowed for title, figures, tables, references, and an abstract limited to about 100 words.
Epitaxial growth of semiconducting LaVO3 thin films Woong Choia) and Timothy Sands Department of Materials Science & Mineral Engineering, University of California, Berkeley, California 94720
Kwang-Young Kim Display R&D Center, LG Electronics, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724, Korea (Received 26 July 1999; accepted 4 October 1999)
Epitaxial thin films of LaVO3 were grown on (001) LaAlO3 substrates by pulsed laser deposition from a LaVO4 target in a vacuum ambient at substrate temperatures 艌500 °C. X-ray diffraction studies showed that epitaxial LaVO3 films consist of mixed domains of [110] and [001] orientations. Thermoprobe and four-probe conductivity measurements demonstrated the p-type semiconducting behavior of the epitaxial LaVO3 films. The temperature dependence of the conductivity is consistent with a thermally activated hopping mechanism with an activation barrier of 0.16 eV.
There has been increasing interest in growing epitaxial thin film heterostructures consisting of materials that have similar crystalline structures but possess remarkably different physical properties. Prime emphasis has been put on perovskite oxides exhibiting wide ranges of electrical, magnetic, and optical properties since the combination of such diverse materials offers attractive possibilities for novel device structures. Although conductive oxide thin films have been extensively investigated due to their potential applications in a number of different fields,1–3 little attention has been given to semiconducting oxide thin films. As components of a ferroelectric nonvolatile memory device in the ferroelectric field-effect transistor (FET) configuration, epitaxial thin films of the semiconducting oxides can enhance the device performance by improving the interface quality between the ferroelectric and semiconducting layers.4,5 Moreover, epitaxial thin films of the semiconducting oxides in an FET can be utilized to make optically transparent switches, with potential on-screen display applications.6 Among numerous semiconducting oxides, LaVO3 shows many interesting properties. It has a GdFeO3-type orthorhombic structure (space group Pbnm) with lattice constants of a ⳱ 0.555548 nm, b ⳱ 0.555349 nm, and c ⳱ 0.784868 nm.7 The structure can be considered as a
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Address all correspondence to this author. e-mail: [email protected] J. Mater. Res., Vol. 15, No. 1, Jan 2000
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pseudocubic perovskite with a lattice constant of ∼0.39 nm, revealing the structural compatibility of this phase with other perovskite-type materials. LaVO3 undergoes an orthorhombi
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