Erbium-silicon-oxide Nano-complexes Prepared by Wet Chemical Synthesis
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Erbium-silicon-oxide nano-complexes prepared by wet chemical synthesis H. Isshiki,1,2 M.J.A. de Dood,1 T. Kimura,2 and A. Polman,1 FOM-Institute AMOLF, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands, 2 Department of Electronic Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan 1
ABSTRACT An entirely new method to fabricate optically active and carrier-mediated excitable erbium complexes on silicon is presented. The Er-Si-O nano-complexes are formed by spin-coating a Si (100) substrate with an ErCl3 solution, followed by a rapid thermal oxidation and annealing sequence (RTOA). Intense room-temperature luminescence is observed from the Er-Si-O nano-complexes, with a line width as narrow as 4 meV at room temperature. The Er emission at 1.53 µm can be excited both directly and through photo carriers. Formation and optical activation of the Er-Si-O nano-complexes are discussed. In addition, an application of the wet chemical synthesis technique to incorporation of the Er-Si-O nano-complexes into nano-porous silicon waveguides is demonstrated. 1. Introduction Erbium doping into silicon and the related materials has been strived to obtain the1.54 µm Er-related intense emission by electric operations at room temperature for the future optoelectronic integrations [1,2]. Several works showed validity of oxygen incorporating into the host materials to enhance the Er-related emission and improve the thermal quenching [1-3]. In order to achieve high optical gain on the centimeter-scale devices, higher erbium concentrations with atomic percent range are needed. The Er3+-related emission is very sensitive to detrimental interactions with the surrounding matrix. Very low solubility of erbium inside silica matrix enhances tendency of erbium clustering, which nearly totally quenches the emissions. The heavy doping also can induce defects, which cause the non-radiative processes. We report here a novel material, Er-Si-O crystalline nano-complexes, formed by wet chemical synthesis and the room temperature PL emissions from the Er-Si-O nano-complexes. Then the Er content is very high: 10-20 at. %. 2. Synthesis of the Er-Si-O nano-complexes on silicon A single crystal Czochralski-grown n-type silicon (100) wafer (P-doped, resistivity: 5 Ωcm) etched in a 5% HF solution was used. The Er-Si-O nano-complexes on Si surface are formed by a spin-coating process (3000 rpm for 1min) with an ErCl3/ethanol solution, followed by the following two-step annealing process, rapid thermal oxidization (RTO) and annealing (RTA) processes. The ErCl3 solution was obtained by dilution of a saturated ErCl3/ethanol solution with ethanol to 10 times. Total amount of erbium on a planer Si surface after the coating process is estimated about 3x1015 cm-2 by a Rutherford backscattering spectrometry (RBS). The combined
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