Evaluation of MoS 2 Films Fabricated by Metal-Organic Chemical Vapor Deposition Using a Novel Mo Precursor i-Pr 2 DADMo(
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MRS Advances © 2020 Materials Research Society DOI: 10.1557/adv.2020.187
Evaluation of MoS2 Films Fabricated by MetalOrganic Chemical Vapor Deposition Using a Novel Mo Precursor i-Pr2DADMo(CO)3 Under Various Deposition Conditions K. Yamazaki1, Y. Hibino1,4, Y. Oyanagi1, Y. Hashimoto1, N. Sawamoto1, H. Machida3, M. Ishikawa3, H. Sudo3, H. Wakabayashi2, and A. Ogura1 1
Meiji University, Kanagawa 214-8571, Japan
2
Tokyo Institute of Technology, Kanagawa 226-8502, Japan
3
Gas-Phase Growth Ltd., Tokyo 184-0012, Japan
4
Research Fellow of the Japan Society for the Promotion of Science, Tokyo 102-0083, Japan
ABSTRACT
Molybdenum disulfide (MoS2) is expected to be applied for devices in various fields owing to its unique characteristics. Establishing a high-productivity manufacturing method which yields high quality films is an important and unresolved issue for the practical applications of MoS2. Among different techniques conducted by researchers all over the world, our approach is cold-wall metal-organic chemical vapor deposition, and we previously reported the deposition of MoS2 with i-Pr2DADMo(CO)3, a novel Mo precursor [S. Ishihara, et al., MRS Advances 3, 379-384 (2018).]. In this study, with the aim of further improving the quality of the MoS2 film using this new Mo precursor, various film formation conditions were controlled and the influence on the film quality was investigated. X-ray photoelectron spectroscopy, atomic force microscopy and Raman spectroscopy were used as evaluation techniques of the samples. As a result, mm-scale uniform film was formed with the deposition time less than 30 min. at temperature as low as 400 °C to 500 °C. It was revealed that maintaining low Mo/S supply ratio (SRMo/S) is crucial in fabricating high quality films.
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INTRODUCTION MoS2, a transition metal dichalcogenide is expected to be applied as next-generation material in various fields. For example, it can be used as thin film transistors for a display because of its high mobility in the ultrathin region, appropriate band gap, high transparency, and stability. Various approaches have been taken to fabricate MoS2 thin films. The approaches can be roughly classified into a top-down method in which a thin film is exfoliated from the bulk material and transferred onto a substrate, and a bottom-up method in which a source gas or particles are directly supplied and deposited on the substrate. Topdown methods include mechanical exfoliation using scotch tape [1] and liquidphase exfoliation such as sonication [2]. Although it has played a major role in basic research because it can easily produce high-quality films at low cost, the lack of scalability and thickness controllability has hindered its application in practical devices. Bottom-up methods are divided into physical vapor deposition (PVD) and chemic
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