Evaluation on Defects of Er and Yb Implanted Al 070 Ga 030 As by Using Positron Annihilation Spectroscopy
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0891-EE03-27.1
Evaluation on Defects of Er and Yb implanted Al0.70Ga0.30As by Using Positron Annihilation Spectroscopy Tomoyuki Arai1 Shin-ichiro Uekusa1 Akira Uedono2 1
Dept. of Electrical and Electronic Engineering, School of Science and Technology, Meiji Univ. 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa, 214-8571, Japan 2 Institute of Applied Physics, Tsukuba Univ. 1-1-1 Tsukuba Ibaraki 305-8573, Japan
ABSTRACT The influence on defects of Er implanted Al0.70Ga0.30As was studied, using standard Positron Annihilation Spectroscopy (PAS) and Photoluminescence (PL) technique.The incident energy of mono-energetic positrons was implanted from 0.1 eV to 30 keV. The characterization of un-doped Al0.70Ga0.30As and Al0.70Ga0.30As:Er,Yb as implanted, and Al0.70Ga0.30As:Er,Yb annealed ranging from 500 to 900oC were successfully studied by using PAS technique. Into the incident energy around 5 keV, the shape parameter of Al0.70Ga0.30As:Er,Yb annealed ranging from 500 to 900oC was decreased and the PL intensity also increased in response to the annealing temperature ranging from 500 to 900oC. INTRODUCTION Rare-earth (RE)-doped semiconductors are of great interest in view of the potential application to optoelectronic devices because of their sharp, temperature-stable emission originating from intra-4f-shell transition of the RE metal [1-3]. In particular, Erbium (Er)-doped semiconductors are a promising material for manufacturing optical devices emitting at 1.54 µm, which coincides with the wavelength of minimum absorption in a silica-based optical fiber. For the Er-doped semiconductor, it is important to resolve problems such as poor luminescence intensity and rapid thermal quenching of the Er-related emission of energy transition from the host semiconductor to the intra-4f-shell of Er ions. So far, Er ions have been co-implanted with impurities (carbon, oxygen, nitrogen) into Al0.70Ga0.30As substrates [4-6], be which we realized an increase in the intensity of Er intra-4f-shell luminescence. Since energy gap value between the second excited state and the ground state of Er is in similar between the first excited state and the ground state of Yb, co-implanted ytterbium (Yb) was also enhanced Er-related emission [7,8].
0891-EE03-27.2
In this work, we studied the optical sensitization of Yb ions co-implanted with Er ions in Al0.70Ga0.30As/GaAs prepared Metal Organic Chemical Vapor Deposition (MOCVD) method. Then, we investigated the experimental results of the defects of Al0.70Ga0.30As:Er,Yb as being related to the photoluminescence. EXPERIMENTAL The Er3+ ions were implanted at the energy of 1 MeV with a dose of 1 × 1013 cm-2, and the Yb3+ at 1MeV with a dose of 1 × 1013 cm-2 at room temperature. Substrates used in this work were grown an undoped Al0.70Ga0.30As/GaAs (100) prepared MOCVD. After the ion-implantation, these samples were thermally annealed at the temperature ranging from 500 to 800oC for 10minutes by the face-to-face technique in hydrogen atmosphere. Photoluminescence (PL) was carried out using a 1m-focal-d
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