Evening Panel Session (November 16, 1983) SOI Technologies for Integrated Circuits
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EVENING PANEL SESSION (NOVEMBER
16,
1983)
SOI TECHNOLOGIES FOR INTEGRATED CIRCUITS
Moderator:
John C. C. Fan, MIT Lincoln Laboratory,
Massachusetts
Panel Members: Y. G. J. C. P.
Akasaka, Mitsubishi Electric Corporation, Japan W. Cullen, RCA Laboratories, New Jersey F. Gibbons, Stanford Electronic Laboratories, California Hill, Plessey Research Ltd., England J. Vail, Rome Air Development Center, Massachusetts
There are a number of viable approaches to silicon-on-insulator (SOI) technologies, and the panel session has assembled a number of leaders in the SOI community for their views of "SOI Technologies for Integrated Circuits." Their viewpoints, shown in tabulated form, were presented for general discussion in the session which was attended by about 150 people. Although SOI technologies are useful for many applications, most of the panelists agreed that the most appropriate near-term applications are for high-speed, high-density integrated circuits. Various SOI technologies, including silicon-on-sapphire (SOS), are currently in the running, but the majority of the panelists felt that for SOI technologies to be widely adopted, SOI must be available as a proven manufactured product within two to three years.
Mat.
Res.
Soc.
Symp.
Proc. Vol.
23
(1984)
Published by Elsevier Science Publishing Co.,
Inc.
4
QUESTION: WHAT ARE THE POTENTIAL APPLICATIONS FOR SO TECHNOLOGIES, IN ORDER OF IMPORTANCE? AKASAKA
CULLEN
GIBBONS
HILL
VAIL
CURRENT: RAD-HARD ICs
IMPROVED MEMORY DENSITY (SRAM, DRAM)
HIGH-SPEED, HIGH- DENSITY ICs
LATCH-UP PREVENTION
3-D ICs
INTERMED. (3-5 yrs): HIGH-VOLTAGE ICs FLAT-PANEL DISPLAYS
LATCH-UP PREVENTION (High Speed High Density Merged CMOS/ Bipolar)
RAD-HARD ICs
ISOLATION IN VLSI
FLAT-PANEL DISPLAYS
LONG-TERM (5-10 yrs): 3-D ICs HIGH-SPEED, HIGH-DENSITY ICs
RAD-HARD ICs
3-D ICs
RAD-HARD ICs
HIGH-SPEED, HIGH-DENSITY ICs
3-D ICs
3-D ICs
HIGH-VOLTAGE ICs
QUESTION: WHAT ARE THE AVAILABLE SOl TECHNOLOGIES IN ORDER OF IMPORTANCE? AKASAKA
CULLEN
GIBBONS
HILL
VAIL
ZONE-MELTING RECRYSTALLIZATION
NON-MELTING CVD, SOS OXY IMPLANTATION POROUS OXIDE
OXY IMPLANTATION, CVD
SOS
SOS
OXY IMPLANTATION
OXY IMPLANTATION
POROUS SILICON
POROUS SILICON
ZONE-MELTING RECRYSTALLI ZATION
RECRYSTALLIZATION
LASER, E-BEAM RECRYSTALLIZATION
POROUS SILICON OXY IMPLANTATION
SOS
RECRYSTALLIZATION STRIP-BEAM LAMP, E-BEAM RECRYSTALLISTRIP-HEATER, ZATION LASER (Seeded, Unseeded) SOS (?M
DIRECT EPITAXIAL GROWTH
5
WHAT SOI TECHNOLOGIES ARE APPROPRIATE FOR EACH APPLICATION?
QUESTION: APPLICATION
AKASAKA
CULLEN
GIBBONS
HILL
VAIL
3-D CIRCUITS
LASER RECRYSTALLIZATION OR SOLID-PHASE EPI
OXY IMPLANTATION. CVD
SCANNING CW BEAM
OXY IMPLANTATION, ZMR
ZMR, DIRECT Si EPI
SOS
OXY IMPLANTATION. STRIP RECRYSTALLIZATION
SOS, OXY IMPLANTATION
OXY IMPLANTATION. SOS, POROUS Si, ZMR, DIRECT EPI
RAD-HARD ICs
HIGH-SPEED, HIGH-DENSITY ICs
ZONE-MELTING RECRYSTALLIZATION (or E-Beam, Laser)
LATCH-UP PREVENTION
LASER RECRYSTALLIZATION
FLAT-PANEL DISPLAYS
HIGH-VOLTAGE ICs
SOS, OXY I
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