Exploring quadrupole oscillator strength of impurity doped quantum dots controlled by Gaussian white noise
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THE EUROPEAN PHYSICAL JOURNAL D
Regular Article
Exploring quadrupole oscillator strength of impurity doped quantum dots controlled by Gaussian white noise Aindrila Bera, Anuja Ghosh, Sk. Md. Arif, and Manas Ghosha Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal, India Received 31 July 2020 / Accepted 5 October 2020 Published online 1 December 2020 c EDP Sciences / Societ`
a Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2020 Abstract. Present study explores the effect of Gaussian white noise on quadrupole oscillator strength (QOS) of impurity doped quantum dot (QD). In view of this QOS profiles have been monitored as various relevant physical parameters vary over a range with and without noise. Two distinct pathways viz. additive and multiplicative have been conceived for the entrance of noise to the system. The QOS profiles exhibit rather regular behavior in absence of noise and in presence of additive noise in similar ways. However, multiplicative noise appears to be successful in bringing about important aspects like maximization, minimization and saturation in the QOS profiles and also for production of large QOS. The outcomes of the study are expected to have substantial impact on nonlinear optical properties of opto-electronic devices comprising of QD where noise plays some active role.
1 Introduction Recent developments in nanotechnology have successfully restricted the spatial freedom of the carriers (electrons and holes) in low-dimensional semiconductor systems (LDSS). The aforesaid spatial restriction can take place in all the three dimensions by the application of suitably designed applied potential. Moreover, LDSS are widely proposed to represent a variety of problems in physics and chemistry. The reduced dimensionality of LDSS favors prominent display of the quantum mechanical effects. In consequence, a number of physical attributes of LDSS (e.g. quantized energy levels, discrete lines in the absorption spectrum etc.) show marked difference from their higher-dimensional neighbours. Thus, electronic and optoelectronic devices comprising of LDSS display much better performance. As an inevitable consequence, in the past few decades, LDSS, subject to varieties of external potentials garnered huge research interest thanks to their prolific usage in semiconductor technology. Confinement of motion of carriers in all dimensions leads to zero-dimensional (or quantum dots, QDs) nanostructures. Molecular beam epitaxy (MBE) is one of the renowned methods for the preparation of QDs. QDs have emerged as semiconductor nanocrystals having dimensions that remain well short of the exciton Bohr radius. The spatial restriction leads to dramatic change in electronic and optical properties of QD. The geometrical shape, size, confining potential and composition of QD a
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noticeably influence its energy spectrum, wave function and density of states (DOS). QDs exhibit many features which are
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