Fabrication And Characterization of Thermoelectric Generators From SiGe Thin Films
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1102-LL05-03
Fabrication And Characterization of Thermoelectric Generators From SiGe Thin Films S. Budak1, S. Guner2,3, T. Hill1, M. Black1, S. B. Judah1, C. I Muntele2, and D. ILA2 1 Electrical Engineering, Alabama A&M University, 4900 Meridian Street, Normal, AL, 35762 2 Center for Irradiation of Materials, Alabama A&M University, 4900 Meridian Street, Normal, AL, 35762 3 Department of Physics, Fatih University, Buyukcekmece, Istanbul, 34500, Turkey Abstract Thermoelectric materials are being important due to their application in both thermoelectric power generation and microelectronic cooling. The thermoelectric power generations convert the heat change to electricity. The waste of heat could be useful if the thermoelectric power generation is applied. Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. A high thermal conductivity causes too much heat leakage through heat conduction. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. ZT can be increased by increasing S, increasing σ, or decreasing K. In this study, we prepared thermoelectric generator devices of SiGe at the thickness of 112 nm using the ion beam assisted deposition (IBAD) system. Rutherford Backscattering Spectrometry (RBS) analysis was used for the elemental analysis. The 5 MeV Si ion bombardment was performed using the AAMU Pelletron ion beam accelerator to make quantum clusters in the film to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardment we measured the cross plane Seebeck coefficient, electrical conductivity by Van der Pauw method, and thermal conductivity by 3w method for different fluences. Keywords: Ion bombardment, thermoelectric properties, Rutherford backscattering, 3w Method thermal conductivity measurement, Seebeck coefficient, Figure of merit * T. Hill, M. Black, S. B. Judah are undergraduate Senior Project Students **Corresponding author: S. Budak; Tel.: 256-372-5894; Fax: 256-372-5855; Email: [email protected] 1. Introduction Thermoelectric materials with high figure of merit can enable novel thermoelectric and thermionic devices with efficient solid-state refrigeration and power conversion. In recent years, there has been a considerable interest in exploiting the thermoelectric properties of low dimensional structures, such as quantum wells, superlattices, and one dimensional wires. These studies show that the low dimensional structures have higher figures of merit due to their thermoelectric power and lower thermal conductivity compared with their bulk constituent
materials or equivalent composition alloys [1]. SiGe monolayer thin film thermoelectric (TE) devices at the thickness of 112 nm were made at the AAMU
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