Fabrications and Electron Transport Properties of One Dimensional Arrays of Gold and Sulfur Containing Fullerene Nanopar
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Fabr ications and Electron Tr anspor t Proper ties of One Dimensional Ar r ays of Gold and Sulfur Containing Fullerene Nanopar ticles Sheng-Ming Shih1,2, Wei-Fang Su1, Yuh-Jiuan Lin2, Cen-Shawn Wu3, Chii-Dong Chen3 Institute of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, R.O.C. 2 Biomedical Engineering Center, Industrial Technology Research Institute, Hsinchu, Taiwan, R.O.C. 3 Institute of Physics, Academia Sinica, Taipei, Taiwan, R.O.C.
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ABSTRACT Novel arrays of gold nanoparticles with sulfur containing fullerene nanoparticles were self-assembled through the formation of Au-S covalent bonds. Disulfide functional groups were introduced into C60 molecule by reacting propyl 2-aminoethyl disulfide with C60. The two dimensional(2D) arrays were formed at the interface of aqueous phase of gold particles and organic phase of fullerene particles as a blue transparent film. TEM images showed that the fullerene spacing between adjacent Au(~10 nm) particles was about 2.1±0.4 nm, which was consistent with the result of 2.18 nm by molecular molding calculations(MM+). The arrays were deposited on the top of pairs of gold electrodes to form 2D colloidal single electron devices. The electrode pairs were made by electron beam lithography techniques, and the separation between tips of the two electrodes in a pair was less then 100 nm. Transport measurements at low temperatures exhibited Coulomb-Blockade type current-voltage characteristics, the lower the temperature the more pronounced the Coulomb gap. Also, step-by-step method was used to assemble one-dimensional(1D) array of gold nanoparticles with fullerene derivative between two electrodes spaced with 15 nm. The Coulomb blockade behavior of 1D arrays was clearer than that of 2D arrays. INTRODUCTION The single electron transistor is a potential candidate for the next generation of electronic devices. It possesses great advantages in low power consumption and high packing density. Since the operating temperature of a single electron transistor is determined solely by the geometrical size of the island(s) between the electrodes. The island(s) should be as small as only a few nanometers, it presents a challenge to the modern nanofabricaton technology. Even with present day state-of-the-art electron beam lithographic technology, this is still a very demanding requirement. Thus, self-assembly of nano-structured materials provides a potential process to fabricate high temperature operating nano-devices. Various nanomaterials have been synthesized. However, finding a method to fabricate such materials in an organized fashion and on an appropriate location of circuitry, effectively and
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efficiently is still a major challenge to scientists. The self-assembly methodology has recently emerged as a useful technique. There are numerous reports regarding the assembly of two-dimensional arrays of quantum dots by lithography and epitaxy depositions.[1] Many metal, insulator and semiconductor nanoparticles have been assembled together with organic mo
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