Facts and Figures
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Bandgaps of Compound Semiconductor Alloys 3.0
2.S
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6.4
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Mhica by MIKa Younnman
SEMICONDUCTOR PROPERTIES
Si Ge GaP A1P GaAs AlAs InP InAs GaSb AlSb InSb ZnSe ZnTe CdTe
Lattice Constant
Energy Gap
ao(A)
Eg(eV)
5.4310 5.6461 5.4506 5.4625 5.6535 5.6605 5.8688 6.0584 6.0954 6.1355 6.4788 5.6676 6.0880 6.4816
1.11 0.67 2.26 2.45 1.42 2.17 1.35 0.36 0.72 1.58 0.17 2.80 2.20 1.49
Mobility @3C 'k (cm 2 /V sec • Electrons 1400 3900 110 8500 280 5000 33000 5000 900 80000 530 530 700
4" 1 " " •
• •
I" 1 1
*N
.("!•
i:"' i •••
L.R. Dawson and ST. Picraux Sandia National Laboratories The family tree of Hl-V and II-Y1 compound semiconductor*, has a wide range of lattice constants and a correspondingly broad spectrum of bandgap energies. The horizontal rainbow depicts visible transitions available in materials with large energy gaps itrending to •>nidll lattice constants) while tie lines indicate the properties of pseudobinarv compounds rormed from the end point compounds. Discontinuous slopes in these tie lines correspond to band crossovers from indirect to direct. Some tie lines are straight. usualK indicating ignorance of "bowing parameters." Graphics by K. Rice and M. \oungman, Sandia National Laboratories. (Previously unpublished.) The MRS Bulletin's Facts and Figures department presents graphs, nomographs, tables, charts, and frequently used information of the type compiled by materials researchers and often taped to the walls by their desks. These "cheat sheets* are intended to be not only interesting but useful enough to keep for reference Please send your comments and any potential material for future publication to: Alan Hurd ([email protected]), Sandia National Laboratories. Albuquerque. NM 87185-0609.
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MRS BULLETIN/MAY 1994 Downloaded from https://www.cambridge.org/core. IP address: 80.82.77.83, on 28 Aug 2017 at 21:57:58, subject to the Cambridge Core terms of use, available at https://www.cambridge.org/core/terms. https://doi.org/10.1557/S0883769400036575
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New Materials Development •
New Characterization Methods •
ABSTRACT DEADLINE: JUNE 20,1994
SHORT COURSE PROGRAM The Materials Research Society is offering its outstanding Short Course and Tutorial Program at the 1994 Fall Meeting. Up-to-date courses on the latest advances in the materials sciences and engineering complement the Fall Meeting symposium topics. Designed with something for everyone in research, development or processing of materials, the courses include overview presentations, in-depth instruction in specialty and emerging areas, and practical discussions for problem solving, all taught by instructors who are experts in their fields. Class sizes are limited. Early preregistration is encouraged.
TECHNICAL PROGRAM A:
Bl: B2: C: D: E: F: G: H: II: 12: Ja: Jb: K: L: M: N: Oa: Ob: P: Q: R: S: T: U: Va: Vb: Wl: W2:
X: Y: Za: Zb: AA: BB:
New Process Technology
Beam-Solid Interactions for Materials Synthesis and Characterization Evolution of Thin-Film and Surface Structure and Morphology Thin Films - Stresses and
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