Formation and Magnetic Interaction of Si/MnGe Core/Shell Nanowire Arrays
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ORIGINAL PAPER
Formation and Magnetic Interaction of Si/MnGe Core/Shell Nanowire Arrays Ilknur Gunduz Aykac 1,2 & Okan Ozdemir 3 & Can Taner 1 & Leyla Colakerol Arslan 1,3 Received: 24 June 2020 / Accepted: 9 July 2020 # Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract We present the preparation of MnGe coated Si nanowires (NWs) using molecular beam epitaxy. Uniformly dispersed silicon NW surfaces were initially covered by Ge, and then Si/MnGe core/shell NW heterostructures were fabricated by solid phase epitaxial growth. Morphology and the magnetic properties of the Si/MnGe core/shell NWs were investigated. The results of scanning electron microscope and transmission electron microscope revealed that the shell layer of NWs was agglomerated to form clusters, which were mainly comprised of Mn5Ge3 phase. Vibrating magnetometer and X-band ferromagnetic resonance measurements indicate that the Si/MnGe core/shell NWs exhibited a slight shape anisotropy along the geometrical wire axis. Keywords Si/MnGe core/shell nanowire . Magnetic heterostructures . Ferromagnetic Mn5Ge3 clusters . Magnetization
1 Introduction Spin-based electronics have come out as a favorable solution in utilizing the electron spin as a new degree of freedom to pave the way for new electronic devices with low power consumption [1, 2] and the construction of semiconductor-based devices, such as spin light-emitting diode (spin-LED) and spin field-effect transistor (spin-FET) [3, 4]. One of the main issues is to perform an effective spin injection from a ferromagnet into a semiconductor. Over the past two decades, several studies have been made on the electrical spin injection into semiconductors such as Si [5–7] and Ge [8–10]. One-dimensional structures such as nanowires (NWs) are of a particular interest in various electronic device applications. Especially, germanium NWs are very promising components because of the high charge carrier mobility of Ge compared with Si and the low growth temperature of Ge NW by chemical vapor deposition,
* Leyla Colakerol Arslan [email protected] 1
Department of Physics, Gebze Technical University, 41400 Kocaeli, Turkey
2
Department of Engineering Physics, Istanbul Medeniyet University, 34700 Istanbul, Turkey
3
Nanotechnology Institute, Gebze Technical University, 41400 Kocaeli, Turkey
which makes them compatible with 3-D integrated circuits [11]. The realization of effective spin injection into semiconductors is complicated [12]. First of all, the huge difference in the conductivity between ferromagnetic metals and semiconductors makes the spin injection efficiency very small. The placement of a Schottky barrier may ease the conductivity mismatch [13, 14], but it is necessary to prepare a tunnel oxide with a defects-free Schottky contact. Moreover, the roughness of the surface could significantly affect the spin injection process [15]. Therefore, the preparation of high-quality FM/SC heterostructures is very important in recognizing high efficiency spin injection into semiconduct
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