Formation of Continuous Nanometer PtSi Thin Film on Si by Pulsed Laser Deposition (PLD)
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"School of Materials
Science and Engineering, Harbin Institute of Technology P.O.433, Harbin, P. R. China 15001, [email protected] "Laboratory of Laser Molecular Beam Epitaxy, Lanzhou Institute of Physics, Lanzhou , P. R. China 730000 ABSTRACT Metal-based silicides on silicon substrates are a widely used material system for infrared detection. PtSi/p-Si infrared Schottky barrier detectors (IRSBD) have become one of the most successful photoemisive infrared detectors. Till now, most of the efforts have been focused on the design of two dimensional PtSi-SBD arrays for the infrared (IR) camera. In this paper, we discussed the formation conditions of PtSi. Qualities are compared for PtSi films prepared at different conditions including different annealing sequences, annealing time, film thickness, and annealing ambient using pulsed laser deposition on various temperature substrates. Film structures and compositions, phase's formation using different processes are analyzed. By studying the kinetics of PtSi formation during various annealing processing, preferable preparing conditions are proposed to form the continuous PtSi ultra-thin film on Si substrate by PLD. INTRODUCTION Since the proposal by Shepherd and Yang in 1973, to use internal photoemission of carriers over the silicide/silicon Schottky barrier for infrared (IR) detection [1], metal-based silicides on silicon substrates have become a widely used material system for infrared detection [2-3]. The main advantage of metal-based silicides on silicon substrates to other detector materials like InSb or HgCdTe is their integration in very large scale integration (VLSI) processes, which allows for very large two dimensional detector arrays. Despite the low quantum efficiency of this detection process, PtSi/p-type Si infrared Schottky barrier detector (IRSBD) has become one of the most successful photoemisive infrared detectors because of the extremely high uniformity of response from diode to diode [4-6]. Up to now, arrays as large as 2048x2048 pixels have recently been reported [7]. Searching for the considerable impetus for extending the wavelength range of PtSi/Si detectors into the longwavelength infrared (LWIR) window (8-12jim) and optimizing the quantum yield in internal photoemission across the interfacial barrier are desirable for PtSi/Si detectors at present time. Till now, most of the efforts have been focused on the design of two-dimensional PtSi SBD arrays for the infrared camera [8,9]. Only few reports discussed in detail the formation conditions of PtSi SBDs and their effects on the detector performance [10]. To improve the detection sensitivity of PtSi SBD, a thin and uniform silicide layer with a super planar silicide/silicon interfaces should be produced [11]. Pulsed laser deposition (PLD) is currently being used to deposit a variety of multicomponent electronic thin films as a materials research method for the development of next generation electronic devices. In this paper, the PtSi ultra-thin film formation by pulsed laser deposition during pu
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