Formation of Porous Organosilicate Glasses Produced by PECVD and UV Treatment
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0990-B01-04
Formation of Porous Organosilicate Glasses Produced by PECVD and UV Treatment Patrick T. Hurley1, Lin-Shu Du2, Paula L. McDaniel2, Brian K. Peterson3, Scott J. Weigel1, Mary K. Haas1, Raymond N. Vrtis1, Dino Sinatore1, Mark D. Bitner1, Kathleen E. Theodorou1, and Mark L. O'Neill1 1 Electronics Technology, Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA, 18195 2 Global Analytical Sciences, Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA, 18195 3 Computational Modeling Center, Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, PA, 18195 ABSTRACT The deposition and post-treatment processes involved in the production of porous organosilicate glasses (OSGs) by plasma-enhanced chemical vapor deposition (PECVD) with ultraviolet light (UV) treatment are investigated through the use of a deuterated organic porogen precursor using infrared spectroscopy and solid-state nuclear magnetic resonance spectroscopy. Infrared analysis provides evidence for hydrogen-deuterium scrambling between the chemical species during the deposition process, which is exacerbated by the UV treatment process. Analysis of 13C cross-polarized magic angle spinning (CP-MAS) NMR suggests that the porogen exists in domains relatively isolated from the network, in agreement with short UV treatment time morphological data that indicates the pore size is relatively constant from the early stages of UV treatment process. The chemical and morphological information provides further support for a deposition controlled morphology and has implications towards enhanced chemical processing of porous organosilicate glass (OSG) films for back-end-of-line integrated circuit manufacturing. INTRODUCTION A major technical challenge in the fabrication of integrated circuits with critical geometries below 65 nm has been the development of interlayer dielectrics (ILDs) with low dielectric constant (k) values that possess sufficient mechanical strength, thermal stability, and adhesive strength required for integration. Materials with increasingly lower dielectric constant values are needed for future generation integrated circuits (ICs) in order to continue to enhance signal propagation. By reducing the dielectric value, this decreases the RC time delay which in-turn increases circuit performance (clock speed). The publicly disclosed intention of several leading edge IC manufacturers to utilize porous OSG materials for back-end-of-line (BEOL) IC manufacturing represents one of the most significant new materials endeavors ever embraced by the semiconductor industry. As a result, the interactions of subsequent process steps used in BEOL processing of interconnect structures with porous ILD materials is the focus of much study. Porous organosilicate glasses produced from the combination of an organosilicate glass precursor (diethoxymethylsilane or methyldiethoxysilane, aka. DEMSô ILD precursor) and organic porogen precursors have been shown to produce films with k values < 2.0 with monodisperse porosity center
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