Frequency-Dependent Noise in Hydrogenated Amorphous Silicon

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FREQUENCY-DEPENDENT NOISE IN HYDROGENATED AMORPHOUS SILICON

F.Z. BATHAEI AND J.C. ANDERSON Department of Electrical Engineering,

Imperial College,

London SW7 2BT,

U.K.

ABSTRACT Flicker noise, due to trapping and emission from states in the mobility gap, leads to a spectrum in which noise power is proportional to I/fn. Experimentally we find 0.6

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