From FET to SET: A Review
Scaling has played an important role in reducing the size of the transistor so as to govern the Moore’s law, but we cannot always simply scale down the size of the transistor without some deterioration in the performance of the transistor. These effects a
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Abstract Scaling has played an important role in reducing the size of the transistor so as to govern the Moore’s law, but we cannot always simply scale down the size of the transistor without some deterioration in the performance of the transistor. These effects are termed as short-channel effects such as drain-induced barrier lowering, threshold voltage shift, leakage current, gate-induced drain lowering, hot carrier effect, etc. In this paper, we have reviewed different gated structures such as single gate, double gate, triple gate and gate all around which will control the electrostatic potential in the channel and reduce these short-channel effects. A molecular transistor, i.e., single electron transistor (SET) is also reviewed in this paper; SET shows better performance and reduced short-channel effects. In this molecular structure, either coulomb blockade or tunneling takes place, due to which it has better control over the flow of the electron. Keywords Multi-gate MOSFET Short-channel effects
Single electron transistor
1 Introduction Metal-oxide-semiconductor field-effect transistor (MOSFET) has been delivering high performance for past decades in ultra-large-scale integration (ULSI) technology [1]. As to govern Moore’s, MOSFET has been scaled down, but scaling of the A. Agarwal (&) P.C. Pradhan Department of Electronic and Communication Engineering, Sikkim Manipal Institute of Technology, Majitar, Sikkim, India e-mail: [email protected] P.C. Pradhan e-mail: [email protected] B.P. Swain Centre for Material Science and Nano Technology, Sikkim Manipal Institute of Technology, Majitar, Sikkim, India e-mail: [email protected] © Springer Nature Singapore Pte Ltd. 2018 A. Kalam et al. (eds.), Advances in Electronics, Communication and Computing, Lecture Notes in Electrical Engineering 443, https://doi.org/10.1007/978-981-10-4765-7_21
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MOSFET is at its physical limits [2, 3]. Beyond this limits, if MOSFET is scaled down, then the performance of the device deteriorates. Due to these limits, there is high deterioration in the performance of the devices, these effects are termed as short-channel effects [4–6]. Some of these short-channel effects (SCE) are hot carrier effects, gate oxide tunneling, subthreshold swing, gate-induced drain leakage, threshold voltage roll-off, drain-induced barrier lowering, and voltage threshold shift [7, 8]. Short channel effect caused due to charge sharing will further lower the source channel barrier height andhence a higher threshold voltage roll-off. Degradation of subthreshold causes a high OFF-state current. Due to high drain voltage, high electric field is generated; which leads to reduction of the barrier height for carriers at the edge of source, this effect is termed as DIBL. When voltage drop between drain and source increases, it lowers the barrier of channel to source junction, as the barrier is reduced between channel and source, electron can easily pass through the barrier and transfer to channel area. Due to this,
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