Fundamental Properties of Semiconductor Nanowires

This book covers virtually all aspects of semiconductor nanowires, from growth to related applications, in detail. First, it addresses nanowires’ growth mechanism, one of the most important topics at the forefront of nanowire research. The focus then shif

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damental Properties of Semiconductor Nanowires

Fundamental Properties of Semiconductor Nanowires

Naoki Fukata Riccardo Rurali •

Editors

Fundamental Properties of Semiconductor Nanowires

123

Editors Naoki Fukata National Institute for Materials Science Tsukuba, Ibaraki, Japan

Riccardo Rurali CSIC Institut de Ciència de Materials de Barc CSIC Bellaterra, Spain

ISBN 978-981-15-9049-8 ISBN 978-981-15-9050-4 https://doi.org/10.1007/978-981-15-9050-4

(eBook)

© Springer Nature Singapore Pte Ltd. 2021 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, expressed or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. This Springer imprint is published by the registered company Springer Nature Singapore Pte Ltd. The registered company address is: 152 Beach Road, #21-01/04 Gateway East, Singapore 189721, Singapore

Preface

Semiconductor nanowires exhibit novel electrical, optical, and mechanical properties due to their reduced dimensionality and nanoscale size. These novel properties not only can improve device performances but also pave the way to the design of new devices with new functionalities. For the optimization of these novel devices, it is important to understand the growth mechanism of nanowires and how to obtain a tight control on the size (diameter and length), the orientation, the degree of crystallinity, and the crystal structure, first. Functionalization and surface modifications in a broader sense are also an important subject for device applications, particularly those related to chemical sensing. Last, but not least, impurity doping is the cornerstone of device design and is thus indispensable for the use of nanowires in electrical and optical devices. Understanding and governing the novel properties of nanowires relies on accurate characterization techniques. In particular, nanoscale and in situ characterization are key tools to understand the properties of nanowires and finally to realize new devices. This boo