Gallium Arsenide
The history of gallium arsenide is complicated because the technology required to produce GaAs devices has been fraught with problems associated with the material itself and with difficulties in its fabrication. Thus, for many years, GaAs was labelled as
- PDF / 1,670,007 Bytes
- 38 Pages / 547.146 x 686 pts Page_size
- 29 Downloads / 218 Views
Gallium Arsen 23. Gallium Arsenide
Gallium arsenide (GaAs) is one of the most useful of the III–V semiconductors. In this chapter, the properties of GaAs are described and the ways in which these are exploited in devices are explained. The limitations of this material are presented in terms of both its physical and its electronic properties.
23.1
Bulk Growth of GaAs ............................ 23.1.1 Doping Considerations ............... 23.1.2 Horizontal Bridgman and Horizontal Gradient Freeze Techniques ............................... 23.1.3 Liquid-Encapsulated Czochralski (LEC) Technique ......................... 23.1.4 Vertical Gradient Freeze (VGF) Technique ................................
23.2 Epitaxial Growth of GaAs ...................... 23.2.1 Liquid-Phase Epitaxy (LPE) ......... 23.2.2 Vapour-Phase Epitaxy (VPE) Technologies ............................ 23.2.3 Molecular-Beam Epitaxy (MBE) ... 23.2.4 Growth of Epitaxial and Pseudomorphic Structures ... 23.3 Diffusion in Gallium Arsenide ............... 23.3.1 Shallow Acceptors ..................... 23.3.2 Shallow Donors ......................... 23.3.3 Transition Metals.......................
502 502
503 504 506 507 507 508 509 511 511 512 513 513
23.4 Ion Implantation into GaAs .................. 513 23.5 Crystalline Defects in GaAs .................... 23.5.1 Defects in Melt-Grown GaAs ....... 23.5.2 Epitaxial GaAs (not Low Temperature MBE GaAs) ............. 23.5.3 LTMBE GaAs ..............................
514 514 516 517
23.6 Impurity and Defect Analysis of GaAs (Chemical) ............................... 517 23.7
Impurity and Defect Analysis of GaAs (Electrical) ............................... 518 23.7.1 Introduction to Electrical Analysis of Defects in GaAs ..................... 518
23.8 Impurity and Defect Analysis of GaAs (Optical) .................................. 521 23.8.1 Optical Analysis of Defects in GaAs 521
Part C 23
The history of gallium arsenide is complicated because the technology required to produce GaAs devices has been fraught with problems associated with the material itself and with difficulties in its fabrication. Thus, for many years, GaAs was labelled as “the semiconductor of the future, and it will always be that way.” Recently, however, advances in compact-disc (CD) technology, fibreoptic communications and mobile telephony have boosted investment in GaAs research and development. Consequently, there have been advances in materials and fabrication technology and, as a result, GaAs devices now enjoy stable niche markets. The specialised uses for GaAs in high-frequency and optoelectronic applications result from the physical processes of electron motion that allow high-speed and efficient light emission to take place. In this review, these advanced devices are shown to result from the physical properties of GaAs as a semiconducting material, the controlled growth of GaAs and its alloys and the subsequent fabrication into devices. Extensive use is made of chapters from “Properties of Gallium Arsenide, 3rd edition
Data Loading...
