GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
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GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique V.A. Sukhoveyev1, V.A. Ivantsov2,3, I.P. Nikitina3, A.I. Babanin3, A.Y. Polyakov4, A.V. Govorkov4, N.B. Smirnov4, M.G. Mil’vidskii4, and V.A. Dmitriev2 1 Crystal Growth Research Center, 29 Ligovsky Pr., 193036 St. Petersburg, Russian Federation 2 TDI, Inc., 8660 Dakota Dr., Gaithersburg, MD 20877, U.S.A. 3 Ioffe Institute, 26 Polytechnicheskaya Str., 194021 St. Petersburg, Russian Federation 4 Institute of Rare Metals, 5 B.Tolmachevsky, 109017 Moscow, Russian Federation ABSTRACT In this paper, we describe the seeded growth of ~20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000oC at less than 2 atm ambient pressure. Growth was performed at ~2 mm/hr growth rate. X-ray diffraction revealed polycrystalline structure of the ingots. Homoepitaxial GaN layers were deposited by HVPE technique on the substrates, which were fabricated from the grown GaN ingots. INTRODUCTION The lack of GaN substrates limits the performance of GaN-based devices including light emitters and microwave power transistors. No doubts, only GaN itself can meet the requirements on perfect substrates for advanced GaN-based electronics. Recently, we have demonstrated that high quality bulk GaN single crystals can be grown from the liquid phase at reasonably low temperatures (
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