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GaSb and InSb Quantum Nanostructures: Morphologies and Optical Properties Thanavorn Poempool, Zon, Suwit Kiravittaya, Suwat Sopitpan, Supachok Thainoi, Songphol Kanjanachuchai, Somchai Ratanathamaphan and Somsak Panyakeow MRS Advances / Volume 1 / Issue 23 / January 2016, pp 1677 - 1682 DOI: 10.1557/adv.2015.6, Published online: 10 December 2015

Link to this article: http://journals.cambridge.org/abstract_S2059852115000067 How to cite this article: Thanavorn Poempool, Zon, Suwit Kiravittaya, Suwat Sopitpan, Supachok Thainoi, Songphol Kanjanachuchai, Somchai Ratanathamaphan and Somsak Panyakeow (2016). GaSb and InSb Quantum Nanostructures: Morphologies and Optical Properties. MRS Advances, 1, pp 1677-1682 doi:10.1557/adv.2015.6 Request Permissions : Click here

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MRS Advances © 2015 Materials Research Society DOI: 10.1557/adv.2015.6

GaSb and InSb Quantum Nanostructures: Morphologies and Optical Properties Thanavorn Poempool1, Zon1, Suwit Kiravittaya2, Suwat Sopitpan3, Supachok Thainoi1, Songphol Kanjanachuchai1, Somchai Ratanathamaphan1, and Somsak Panyakeow1* 1

Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand 2 Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok 65000, Thailand 3 Thailand Microelectronics Center (TMEC), National Electronics and Computer Center, Chachoengsao 24000, Thailand *

Corresponding author. Tel.: +662-218-6524; Fax: +662-251-8991, E-mail address: [email protected]

ABSTRACT GaSb/GaAs and InSb/GaAs material systems can create type-II quantum nanostructures which provide interesting electronic and optical properties such as having long carrier life time, low carriers-recombination rate, and emitting/absorbing low photon energy. These characteristics of type-II nanostructures can be applied for infrared or gas detection devices, for memory devices and even for novel intermediate band solar cells. In contrast, lattice mismatches of GaSb/GaAs and InSb/GaAs material system are 7.8% and 14.6%, respectively, which need some specific molecular beam epitaxial (MBE) growth conditions for quantum nanostructure formation via Stranski–Krastanov growth mode. In this paper, the growth of self-assembled GaSb and InSb quantum nanostructures on (001) GaAs substrate by using MBE was reported. The surface morphology of these two quantum nanostructures and their optical properties were characterized by atomic force microscopy and photoluminescence (PL). The experimental results were compared between these two quantum nanostructures. Due to the lattice mismatch in each material system and the difference in sticking coefficient of Ga- and In-atoms during epitaxial growth, we obtain GaSb/GaAs quantum dots (QDs) with a density ~1010 dots/cm2