Germanium Far Infrared Blocked Impurity Band Detectors

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GERMANIUM FAR INFRARED BLOCKED IMPURITY BAND DETECTORS C.S. Olsen,a'b J.W. Beeman,' W.L. Hansen,' and E.E. Hallerab " Lawrence Berkeley National Laboratory and b University of California at Berkeley Berkeley, California 94720 USA ABSTRACT We report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250 .tm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility

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