Growth and Nucleation of Hydrogenated Amorphous Silicon on Silicon (100) Surfaces
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[1]. Information about film structure can be obtained with these techniques, as well as with transmission electron microscopy (TEM) and ellipsometry. TEM studies have played a critical role in understanding the relationship between columnar microstructure and low quality a-Si:H films [2]. Spectroscopic ellipsometry has the advantage that measurements can be made in situ in real time during film growth. It provides information about the evolution of surface roughness assuming a two layer model of the growing film and a homogeneous roughness [3, 4]. In comparison, scanning probe microscopies provide the actual surface topography of aSi:H films with sub-nanometer resolution, including inhomogeneities, but only at the end of a deposition. In previous reports we have examined intrinsic a-Si:H films with thickness comparable to those used in solar cells. These films were either grown in our laboratory and measured with no air exposure, or transferred from the National Renewable Energy Laboratory (NREL) and measured following modest air exposures (
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