Growth of C 60 Fullerene Films on Semiconductor Surfaces

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G3.12.1

Growth of C60 Fullerene Films on Semiconductor Surfaces Elena V. Basiuk (Golovataya-Dzhymbeeva), José G. Bañuelos, Alejandro Esparza, and José M. Saniger Centro de Ciencias Aplicadas y Desarrollo Tecnológico, Universidad Nacional Autónoma de México, Apdo. Postal 70-186, 04510 México D.F., MEXICO

ABSTRACT We report on a study of vacuum-deposited thin films of C60 fullerene on Si (100) and InP (100) semiconductor surfaces. The film morphology and C60—substrate interactions were investigated by using atomic force microscopy (AFM) and Fourier transform infrared spectroscopy (FTIR). For the film deposition, both patterned Si aand InP surfaces were used. It was found that the stronger interactions occur between C60 molecules and Si surface, than between C60 molecules and InP surface. On InP surface with microrelief of parallel V-grooves oriented in [011] direction, C60 films grow preferentially above the groove walls, with C60 grains arrayed in the direction perpendicular to the groove axis.

INTRODUCTION The idea of creating a new generation of electronic devices, based on the semiconductor properties of fullerene C60 molecules, stimulated systematic studies of C60 solid phases in the recent years [1-6]. The technology of electronic devices demands for high-quality deposited films, which can be achieved by optimizing conditions for the deposition techniques and by sophisticating the methods of the film characterization [3-5,7-9]. New and unexpected phenomena can be anticipated, which are associated with finite size, limited dimensionality, and substrate—C60 interactions [5,10]. The preparation of C60 films on semiconductor substrates was reported recently by several research groups [4,5,7,11,12]. In these works, Si and GaAs were used as a semiconductor substrate for growing fullerene films, where multidomain [7] or smallgrain crystalline islands [11] can be obtained. Bernaets and co-workers [10] prepared highquality C60 films using GeS as substrate, and studied the role of lattice mismatch. The study by Nakayama et al. [6] of fullerene deposition along surfaces steps on Si surface, allowed to produce C60 nanowires. There is no doubt that finding better characterization methods represents considerable interest in the fullerene film production. Scanning tunneling microscopy (Nakayama et al.[6]), atomic force microscopy (AFM; Thundant et al. [7]), X-ray difraction (Yao et al. [5]) are used extensively to study the structure and morphology of such films. In the present work we report on the [60]fullerene film deposition onto plane and patterned Si (100) and InP (100) semiconductor surfaces, using vacuum sublimation technique. The morphology of the films obtained and the substrate—C60 interactions were investigated by using AFM and Fourier transform infrared spectroscopy (FTIR).

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