Harmonic and Intermodulation Performance of Metallic Carbon Nanotube (MCNT) and Complementary Carbon Nantube Field Effec
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Harmonic and Intermodulation Performance of Metallic Carbon Nanotube (MCNT) and Complementary Carbon Nantube Field Effect Transistor (CNTFET) Amplifier Muhammad Taher Abuelma’atti
Received: 17 October 2008 / Accepted: 10 February 2009 / Published online: 28 February 2009 # Springer Science + Business Media, LLC 2009
Abstract This paper presents a simple mathematical model for the output-voltage (current)/ input-voltage characteristic of the carbon nanotube field effect transistor (CNTFET) complementary inverting amplifier and the metallic carbon nanotube (MCNT) interconnect. The model, basically a Fourier series, yields closed-form expressions for the amplitudes of the harmonic and intermodulation components of the output voltage (current) resulting from a multisinusoidal input voltage. The special case of a two-tone equalamplitude input voltage is considered in detail. The results show that the harmonic and intermodulation performance of the complementary CNTFET-based inverting amplifier and the MCNT interconnect is strongly dependent on the values of the amplitudes of the input tones with the third-order intermodulation component dominating over a wide range of the input voltage amplitudes. The results also show that while the harmonics may exhibit minima, the intermodulation products are almost monotonically increasing with the increase in the input voltage amplitude and exhibit no minima. Keywords Metallic carbon nanotube . Carbon nanotube field effect transistor . Intermodulation distortion . Harmonic distortion
1 Introduction Since their inception in the early 1990's, experimental and theoretical work have shown that carbon nanotubes (CNTs) can be either metals or semiconductors. Metallic Carbon Nanotube (MCNTs) have conductivities and current densities that meet or exceed the best metals, and semiconducting tubes have mobilities and transconductance that meet or exceed the best semiconductors; see for example [1–4] and the references cited therein. With transistors and interconnects made from the same multi-wall nanotubes with some sections being semiconducting and others being metallic, carbon nanotubes are very promising candidates for electronic applications [5]. This explains the growing interest in developing M. T. Abuelma’atti (*) King Fahd University of Petroleum and Minerals, Box 203, Dhahran 31261, Saudi Arabia e-mail: [email protected]
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J Infrared Milli Terahz Waves (2009) 30:453–460
electronic circuits using carbon nanotube field effect transistors (CNTFETs) with interconnects using MCNTs. Of particular interest here is the feasibility of using carbon nanotubes for analog circuit design. In such circuits, linearity plays an important role in characterizing the performance of the electronic circuits. Unfortunately, both the complementary CNTFET-based inverting amplifier of Fig. 1 [6] and the MCNT interconnect exhibit a nonlinear input-output characteristic. Figures 2 [6] and 3 [5] show the output-voltage/input-voltage characteristic of the inverting voltage amplifier of Fig. 1 and the hig
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