Heat and mass transfer simulation of SiC boule growth by sublimation
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Heat and mass transfer simulation of SiC boule growth by sublimation Michel Pons, Cecile Moulin1, Jean-Marc Dedulle, Alexandre Pisch, Bernard Pelissier, Elisabeth Blanquet, Michail Anikin, Etienne Pernot, Roland Madar, Claude Bernard, Christian Faure1 Thierry Billon1 and Guy Feuillet1 Institut National Polytechnique de Grenoble, LTPCM and LMGP, UMR-CNRS, BP 75, 38402 Saint Martin D'Hères, France 1 LETI, Commissariat à l'Energie Atomique, 38054 Grenoble Cedex 9, France ABSTRACT An accurate modelling and simulation of the sublimation growth process needs a software taking into account a multitude of highly coupled phenomena: fluid mechanics, convective, conductive and radiative heat transfer, electromagnetic, multicomponent species transport, homogeneous and heterogeneous reactivity and finally thermal and transport databases. The objective of this paper is to combine modelling trends with experimental results to propose explanations and solutions to growth problems. Finally, a simple and generic mechanical approach will show the relations between the density of dislocations and the temperature field.
INTRODUCTION The silicon carbide SiC semiconductor material is proving today, from intense scientific and industrial development, its potential to replace and outperform silicon in electronic devices for high power, high frequency and high temperature applications. In 1978 [1] the invention of the seeded sublimation growth technique so called the « Modified Lely Method », opened the path to the production of large area SiC wafers. The improvement of structural properties together with the increase of the available size of SiC wafers are the key area of research and development in this field [2]. The continuing improvement observed so far is mainly the result of extensive experimentation and characterisation. However, the advance in process modelling as well as in the different computational tools [3-23] proves their effectiveness in so far as the help with the design of experiments. Recently, in situ X-Ray imaging of the SiC PVT process [24-25] has considerably increased the knowledge in the dynamic nature of the growth. An accurate modelling and simulation of this growth process needs a software taking into account a multitude of highly coupled phenomena: fluid mechanics, convective, conductive and radiative heat transfer, electromagnetic, multicomponent species transport, homogeneous and heterogeneous reactivity and finally thermal and transport databases. Some parts of this modelling work have reached maturity and may be already extremely useful for the development of the process.
EXPERIMENTAL AND NUMERICAL SETUP 6H and 4H crystals with diameters up to 35 mm have been grown by the Modified Lely Method [26]. An experimental set up with RF heating and graphite crucible was used. The crucible was wrapped by a graphite foam for thermal insulation and the whole assembly was H1.4.1
placed inside a water cooled quartz tube. The growth temperature (measured on the top of graphite lid) was about 2400 K and the argon pressu
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