High-Performance Enhancement of a GaAs Photodetector Using a Plasmonic Grating
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High-Performance Enhancement of a GaAs Photodetector Using a Plasmonic Grating Bedir Yousif 1 & Mohy Eldin A. Abo-Elsoud 2 & Hagar Marouf 3 Received: 22 November 2019 / Accepted: 17 February 2020 # Springer Science+Business Media, LLC, part of Springer Nature 2020
Abstract In this study, we present and establish a gold surface plasmon polariton (SPP) GaAs photodetector that achieves high internal quantum efficiency (IQE). At a wavelength of 600 nm, the IQE with the SPP was 85%, while the IQE without the SPP was 42%, an enhancement of 43%. Also, at a wavelength of 675 nm, the IQE with SPP was 82%, whereas the IQE without SPP was 45%, which constitutes an increase of 37%. Such excellent performance is ascribed to the subwavelength scope of the optical power in the photoconductive-based gold SPP GaAs that provides high IQE. Moreover, the recombination of the SPP in the photodetector provides greater photocurrent and responsivity. Keywords Plasmonic photodetectors . Surface plasmon polaritons . Light trapping . GaAs photodetector . Plasmonic grating
Introduction Plasmonic photodetectors have attracted great interest in the field of photonics in recent decades. Plasmonics is desirable as metal structures are capable of trapping light by coupling an electromagnetic wave with charged carrier oscillations at the metal surface. The wavelength of these oscillations is significantly smaller than that of the corresponding wavelength of light in space, which enables subwavelength-scale light–matter interaction, thus enabling the design of ultra-compact devices with the potential for higher speed. The integration of surface plasmon polariton (SPP) technology in the fabrication of photodetectors has shown great promise in the development of active GaAs PIN circuits. By exploiting the ability of metals to constrain light at the deep-
* Hagar Marouf [email protected] Bedir Yousif [email protected]; [email protected] Mohy Eldin A. Abo-Elsoud [email protected]; [email protected] 1
Electrical Engineering Department, Faculty of Engineering, Kafrelsheikh University, Kafrelsheikh 35514, Egypt
2
Electronics and Communications Department, Faculty of Engineering, Mansoura University, Mansoura 35516, Egypt
3
Electronics and Communications Department, Delta High Institute for Engineering and Technology, Delta Academy, Damietta 34511, Egypt
subwavelength scale, plasmonics has enabled a substantial reduction in the size of photonic components [1–8], advancing the technology toward the scaled combination of electronic and optical components [8]. This paves the way for the next generation of ultra-dense interconnects [9] with integrated optoelectronic interfaces. Furthermore, the realization of high-speed devices [10–12] will help to fulfill the growing demand for ultrafast detection in both the communications and sensing markets (http://www.ethernetalliance.org/roadmap/), i.e., for decoding of high-speed optical signals and for high-speed detection, respectively [13]. Metal components are an inherent feature of
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