High-Quality Transparent Conducting Oxide Films Deposited by a Novel Ion Plating Technique
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High-Quality Transparent Conducting Oxide Films Deposited by a Novel Ion Plating Technique T. Sakemi1, S. Shirakata2, K. Iwata3, K. Matsubara3, H. Tampo3, P. Fons3, S. Niki3, K. Awai4, T. Yamamoto5, 1 Research & Development Center, Sumitomo Heavy Industries, Ltd., 5-2 Soubiraki-cho, Niihama, Ehime 792-8588, Japan 2 Facility of Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan 3 National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan 4 Sumiju Technical Center Co., Ltd., 5-2 Soubiraki-cho, Niihama, Ehime 792-8588, Japan 5 Department of Electronic and Photonic System Engineering, Kochi University of Technology, Tosayamada, Kochi 782-8502, Japan ABSTRACT A novel ion plating technique that has the attributes of both superb controllability of the high density plasma used as well as ion beam shape has been developed and applied to the deposition of transparent conducting oxides. The advantages of this technique include reduced ion damage, scale-up capability, in-plane uniformity, the use of low growth temperatures and fast deposition rates suggesting that the technique is very promising for a variety of applications such as solar cells and organic device fabrication. Gallium doped zinc oxide films have been deposited on glass substrates at 200°C. Resistivities as low as ρ~2.7x10-4 Ω-cm with high transparency have been demonstrated. In addition, this technique has been successfully applied to large area deposition such as 65 cm x 55 cm-sized glass substrates. INTRODUCTION In the URT-IP (Uramoto Tanaka-Ion Plating) method [1], target materials mounted on the anode are vaporized by the heat generated by a DC arc discharge current, and activated or highly ionized upon traversing through the high-density arc plasma formed just above the anode. Ionized atoms or particles are accelerated to the substrate at a kinetic energy corresponding to the anode voltage. This energy enhances the surface migration of deposited particles even at relatively low substrate temperatures. In the URT-IP process, no highly energetic particles
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collide with the substrate surface unlike the sputtering process in which highly energetic oxygen negative ions accelerated by the sputtering target voltage induce ion damage. Therefore, the URT-IP method is considered to be a low damage deposition process when compared to the widely used magnetron sputtering method. Indium tin oxide (ITO) films have been deposited on 800 mm wide glass substrates at RT-200°C. Resistivities of as low as ρ~1.2x10-4 Ω-cm with excellent uniformity over an 800 mm wide substrate have been demonstrated by a system equipped with two plasma guns placed in parallel. The ITO thin films were found to be highly (222) oriented with a surface
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