High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation
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High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation Andrzej Taube1, 2, Maciej Kozubal1, Jakub Kaczmarski1, Marcin Juchniewicz1, Adam Barcz1, 3, Jan Dyczewski3, Rafaá Jakieáa3, ElĪbieta Dynowska1, 3, Michaá Adam Borysiewicz1, Paweá Prystawko4, 5, Jakub JasiĔski2, Paweá Borowicz1, 6, Eliana KamiĔska1, Anna Piotrowska1 1
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland. 3 Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland 4 Institute of High Pressure Physics, Polish Academy of Sciences, Sokoáowska 29/37, 01-142 Warsaw, Poland. 5 TopGaN Ltd., Sokoáowska 29/37, 01-142 Warsaw, Poland 6 Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224Warsaw, Poland 2
ABSTRACT The paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×1013 ion/cm2 and 1×1013 ion/cm2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×1011 /Ƒ and increased to 1.17×1014 /Ƒ and 3.29×1012 /Ƒ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×108 /Ƒ. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600rC. INTRODUCTION AlGaN/GaN high electron mobility transistors (HEMTs) are excellent candidates for the next-generation power and microwave electronic devices because of the combination of high electron mobility and velocity in the channel with high critical electric field value[1]. Dry etching of mesa structures is commonly used to isolate individual HEMT device, however only a few reports on using ion implantation for this goal have been published up to now. Using ion implantation to fabricate planar device structures should have positive impact on increase technological yield and decrease the gate leakage caused by possible contact of the gate metallization to two dimensional electron gas (2DEG) on mesa sidewall [2]. It has been shown that ion implantation also increases the breakdown voltage of power HEMTs in comparison with mesa etching [3]. In this paper we present highly resistive and thermally stable isolation for planar AlGaN/GaN HEMTs using Al+ double ion implantation. EXPERIMENTAL DETAILS
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CONCLUSIONS In this work we report a study on the electrical isolation for planar AlGaN/GaN HEMT structures using aluminum ion double implantation. Structural and optical studies revealed large crystal lattice disorder after Al+ ion implantation. The lattice was partially recovered after annealing. High resistivity of fabricated isolation stru
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