High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination
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Mat. Res. Soc. Symp. Proc. Vol. 572 ©1999 Materials Research Society
were fabricated on few samples following a conventional photolithographic process (Fig. 1(a)), while Schottky diodes with oxide layer edge termination were fabricated as follows. In order to obtain a thick oxide layer for edge termination, instead of sputter depositing Si0 2 on top of the thermal oxide as reported by other groups [3], we have adopted a depo-
conversion technique which is discussed in a companion paper [6]. This technique essentially involves sputter deposition of a thick Si layer on the SiC wafer and conversion of Si to Si0 2 by oxidation. After conversion, the sample was annealed in Ar for half an hour in order to improve the oxide quality. The thick oxide layer was then selectively etched using a first mask to form the Schottky contact window with a diameter of 140 microns. After a cleaning process, Al was evaporated onto both sides of the sample in high vacuum (
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