Impact of Internal Capacitance and Resistance to the Noise Parameter Performance
This paper reports preliminary investigation of internal resistance and capacitance influence to the characterized noise parameter performance. Device Under Test (DUT) for this project is fabricated using 0.13 \(\upmu \) m process technology. The observat
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stract This paper reports preliminary investigation of internal resistance and capacitance influence to the characterized noise parameter performance. Device Under Test (DUT) for this project is fabricated using 0.13 µm process technology. The observation is performed by looking directly at the measurement results of scattering parameter and noise parameter. All uncertainties related to the measurement have been removed by the means of calibration and deembedding. Data for the internal resistance and capacitance are extracted from the scattering parameter measurement. For comparison, the measurements were conducted at two sets of gate voltage (Vg) biasing, assuming noise levels are proportional to the amount of voltage stimulated. As for the result, it is found that the lower internal resistances will result in lower Rn and NFmin. Keywords Noise parameter ⋅ Internal resistance ⋅ Internal capacitance
1 Introduction Measurement and modeling of high-frequency (HF) noise should provide a preliminary knowledge to the circuit designers regarding the behavior of HF noise on Radio Frequency Integrated Circuit (RFIC) devices [1]. In order to develop a model that is able to predict precise noise level, the device modeling team needs to have good understanding of noise sources and the elements that create the noise [2]. It is imporS.K.K. Mohd (✉) ⋅ N. Rhafor ⋅ R.A. Zawawi ⋅ A.A. Manaf Collaborative Microelectronic Design Excellence Centre (CEDEC), Universiti Sains Malaysia, Gelugor, Malaysia e-mail: [email protected] N.M. Noh (✉) ⋅ A. Hashim ⋅ A.N.A.Z. Badri ⋅ M.T. Mustaffa ⋅ A.A. Manaf School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Gelugor, Malaysia e-mail: [email protected] Y.M. Yusof Silterra Malaysia Sdn. Bhd, Kulim, Malaysia © Springer Science+Business Media Singapore 2017 H. Ibrahim et al. (eds.), 9th International Conference on Robotic, Vision, Signal Processing and Power Applications, Lecture Notes in Electrical Engineering 398, DOI 10.1007/978-981-10-1721-6_8
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tant to distinguish between major and minor noise sources created by these elements. The information regarding noise sources will help circuit designers and modeling team to optimize the design and layout pattern of the device, thus reducing the noise and creating better models. This paper shows the observation of noise parameter performance for metal oxide semiconductor field effect transistor (MOSFET) in relation with behavior of internal resistance and capacitance. Device Under Test (DUT) for this project was fabricated using 0.13 µm process technology. The measurement was conducted at two different biasing voltages as the noise performances under the two different biasing conditions are not the same due to the different bias currents flowing through the device. This approach enables the investigation on the relationship between the internal resistance and capacitance with the noise performance.
2 Noise Model and Small Signal Parameter Noise Figure (NF) represents the ability of a system to process low-leve
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