Implementation of CVD Diamond Growth Methods for Selective and Efficient Formation of Color-Centers in Diamond
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Implementation of CVD Diamond Growth Methods for Selective and Efficient Formation of Color-Centers in Diamond Stefano Gay1, Giacomo Reina1, Ilaria Cianchetta1, Emanuela Tamburri1, Mariglen Angjellari1, Maria Letizia Terranova1 and Silvia Orlanducci1 1 Dept. Science and Chemical Technology, University Tor Vergata of Rome, Rome, Italy ABSTRACT We report here on the chemical methodologies that are being settled in our labs for the insertion in diamond of foreign atoms and consequent creation of fluorescent defects. The inclusion of Si, Cr, Ge, able to produce color centers, is directly obtained during the process of diamond synthesis by means of a CVD technique. The deposition of the diamond films takes place on substrates of different nature, treated following procedures specifically settled to control the insertion of the different species. The photoluminescence emission from a series of diamond samples grown on different substrates (Si, Ge and Ti) has been investigated and is discussed with reference to the morphological/structural features of the diamond phase and to the experimental procedures adopted for substrate preparation. INTRODUCTION Absorption and fluorescence bands can arise from localized electronic states around impurities, vacancies, charge carriers and their combinations, inside a crystalline lattice. The electronic wavefunctions of these emitters, often called color centers, are opening new scenarios in research and technology and the creation of emitting centers in crystalline materials is nowadays a key point to be pursued. This is of particular importance when dealing with diamonds, for which more than 500 electronic optical centers, due to point defect, have been detected. Almost half of color center in diamond are related to the presence of impurities, and half to lattice defects such as, radiation damages, vacancies etc. However, only some of them have been extensively studied and up to now only few have been fully recognized and characterized [1]. The research on the NVs defects (neutral NV0 and negatively charged NV-) has leaded the field until now, either on centers found in natural diamond, or on those artificially produced by CVD synthesis or ion implantation. [2, 3] Recently other color centers, such as those related to Si, Cr and Ni, are gaining more and more attention, particularly for the possibility of exploiting their near-IR emission for telecommunication and biological applications. Among the color centers, the SiV was widely investigated. SiV has a very sharp and intense zero phonon line, (ZPL), emission centered at 738 nm, with a FWHM of a few nanometers, and a short photoluminescence lifetime of about 1-4 ns. However, the quantum efficiency, at least in bulk diamond, is low (QE 0.05). Despite of a deep interest of the scientific community in this fluorescent defect [4, 5], the controlled formation of color centers in diamond is still a challenge. The most used technique for the production of SiV are ion implantation followed by an annealing of the diamond crystal and CVD. Data
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