Improved structural and dielectric properties of Cd and Ti dual doped ZnO nanoparticles
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Improved structural and dielectric properties of Cd and Ti dual doped ZnO nanoparticles Pallavi Saxena1 · P. Choudhary1 · A. Yadav1 · B. Dewangan1 · V. N. Rai1 · A. Mishra1 Received: 15 April 2020 / Accepted: 26 August 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract This report addressed the impact of Cadmium (Cd) and Titanium (Ti) substitution on the structural, optical and dielectric properties of Z n0.94Cd0.06−xTixO (x = 0 and 0.03). Both the samples are synthesized using the sol–gel auto combustion method and their properties are investigated using X-ray diffraction (XRD), Raman spectroscopy, UV–Visible spectroscopy and dielectric measurements. The structural study using Rietveld refinement of XRD patterns showed the presence of a singlephase hexagonal structure with the P63mc space group for both the samples. The refinement results revealed that with the increase in Ti content, both the lattice parameter and the unit cell volume increase. Shifting of the absorption edge to lower wavelength and blue shift of the bandgap are observed in the UV–Visible spectra of the Ti-doped Zn0.94Cd0.06O sample. The dielectric properties of the prepared samples were investigated by the dielectric spectrometer with varying frequencies. It has been found that dielectric constant and conductivity properties of Zn0.94Cd0.06O are enhanced via Ti substitution. Keywords Metal oxide · Sol–gel synthesis · X-ray diffraction · Dielectric properties
1 Introduction Nowadays, semiconductor metal oxide nanomaterials such as ZnO, CuO, CdO, MgO and TiO2 have drawn great interest because of their exclusive chemical and physical properties [1]. Such oxides belong to the group of transparent conducting oxides (TCO) and they have been used in numerous optoelectronic, light-emitting devices, and electronics such as in gas sensors, light-emitting diodes, Li-ions electrical storage devices. These are the reasons why a great deal of attention is given by scientists to this family of oxide materials to develop their microstructural, optical and dielectric properties, based on the intended application required [2]. Among several oxides, the most applicable TCO material is zinc oxide (ZnO), because it possesses unique properties such as wide bandgap (~ 3.3 eV) at 300 K, n-type semiconductor, high transparency in the visible region, good stability and low cost. Such properties allow it a popular material for several applications [1, 3]. * Pallavi Saxena [email protected] 1
Materials Science Laboratory, School of Physics, Vigyan Bhavan, Devi Ahilya University, Khandwa Road Campus, Indore 452001, India
Doping in ZnO with compatible elements without a significant impact on charge carrier concentrations can help to accommodate the structural and electrical properties of ZnO. In particular, cadmium doping produces a redshift and targets devices operating in the visible spectral range (1.7–3.2 eV). Cadmium oxide (CdO) is also an n-type semiconductor with a direct bandgap of ∼ 2.4 eV and versatile material for numero
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