Independent switching technique to remove abnormal output voltage in hybrid active NPC inverters
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ORIGINAL ARTICLE
Independent switching technique to remove abnormal output voltage in hybrid active NPC inverters Min‑Geun Song1 · Seok‑Min Kim1 · Kyo‑Beum Lee1 Received: 28 May 2020 / Revised: 7 October 2020 / Accepted: 9 October 2020 © The Korean Institute of Power Electronics 2020
Abstract This paper proposes the independent switching technique to remove abnormal output voltage in hybrid active neutral-point clamped (ANPC) inverters. The hybrid ANPC inverter is composed by mixing silicon (Si) devices and silicon carbide (SiC) devices, unlike the conventional ANPC inverter which is generally composed of Si devices only. SiC devices provide low switching losses under a high switching frequency and a high withstand ability under high temperature compared with Si devices. Therefore, the hybrid ANPC inverter using SiC devices provides low power losses, high efficiency, and high reliability compared with the conventional ANPC inverters. In this hybrid ANPC inverter, abnormal output voltages are generated when the sinusoidal output current crosses the zero point. The abnormal output voltages are momentary pulses that must not be generated, and these pulses distort the output current and degrade the power quality. These pulses have two typical causes: one is from the switching operation time difference between switches, and the other is from deadtime. This paper proposes the independent switching technique to remove the abnormal voltages caused by the two reasons and verifies the proposed technique by simulation and experiment. Keywords Independent switching · Abnormal output voltage · Silicon carbide devices · Hybrid active neutral-point clamped inverter · Three-level inverters
1 Introduction Silicon (Si) devices have been traditionally used for power electronic converters. Especially, the Si-based insulated gate bipolar transistor (Si-IGBT) has been widely adopted due to its high-voltage withstand and high-switching frequency capability. The Si IGBT has been widely used as well in three-level inverter topologies such as neutral-point clamped (NPC) and active NPC (ANPC) inverters. However, according to the rising demand for higher efficiency and power quality, silicon carbide (SiC) devices are highlighted instead of Si devices. SiC devices have advantages of low switching losses under the same switching frequency compared with Si devices. Thus, a power conversion system consisting of SiC devices could be operated with a higher switching frequency and lower switching losses, and these characteristics reduce the heat-sink size and output filter [1–7]. * Kyo‑Beum Lee [email protected] 1
Department of Electrical and Computer Engineering, Ajou University, Suwon, Korea
The hybrid ANPC inverter covered in this paper is composed using Si-IGBTs and SiC-metal oxide semiconductor field effect transistors (SiC-MOSFETs). By contrast, the conventional ANPC inverter generally only consists of SiIGBTs; thus, it suffers from switching frequency limitation due to the increase of switching losses at a higher frequency. In addition
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