Influence of Phosphorus Dopant Concentration on Recrystallization of Buried Amorphous Layers in SI(100) Produced by Chan
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INFLUENCE OF PHOSPHORUS DOPANT CONCENTRATION ON RECRYSTALLIZATION OF BURIED AMORPHOUS LAYERS IN SI(100) PRODUCED BY CHANNELED IMPLANTS R.J. SCHREUTELKAMP, K.T.F. JANSSEN+ AND F.W. SARIS F.O.M. Institutefor Atomic andMolecular Physics, Kruislaan407, 1098 SJ Amsterdam, The Netherlands + PhilipsResearch Laboratories,p.o. box 80.000, 5600 JA Eindhoven, The Netherlands J.F.M. WESTENDORP AND R.E. KAIM ASM Ion Implant, 123 Brimbal Avenue, Beverley, MA 01915, USA
Abstract Buried amorphous layers are produced in Si(l00) by implantation of 100 keV P+ and Si+ ions under channeling condition along the -direction.Rutherford Backscattering Spectrometry in combination with channeling shows that a continuous buried amorphous. layer with a thickness of 1300 A results undera crystalline toplayer with a thickness of 600 A. After Solid Phase Epitaxy a highly concentrateddefect layer remainsfor all implants at the depth where the two amorphous/crystallineinterfaces of the buried amorphous layer meet. Planarchannelingalong (100)-directionshows that dislocationloops are present after SPE regrowth at the 'interface' of the two crystalline regions for all implants. The size of the dislocation loops becomes smaller in the presence of phosphorus. Moreover, channeling analysis shows that in case of Rapid Thermal Annealing treatment in addition to the SPE regrowthprocess the defect structurespresent afterfull recrystallizationcan be more easily dissolved in case of the phosphorus implants as comparedto the silicon self implant. 1. Introduction Channeled ion implantation, with the major axis aligned with the incident ion beam, is an attractive alternative to conventional non-zero tilt angle ion implantation. In channeling condition, deep penetration of dopants at modest ion energies can be achieved and damage levels are significantly reduced. Moreover, ion beam shadowing by high aspect ratio features in IC manufacturing is prevented. For conventional ion implantation into semiconductor materials (energies up to 200 keV) damage annealing has been extensively studied and reviewed over the years 11]. Much insight has been gained on post-implantation processes like Solid Phase Epitaxy (SPE), implantation induced defect formation and annihilation during annealing [2,3,4]. However, for high energy implants where larger ion penetration depths are involved, the mechanisms of defect annihilation appear to be quite different. This is a result of the fact that during high energy implantation a buried defect layer is produced. Because of the buried defect layer formation in case of high energy implants, the surface can not act as an effective sink for defects as it can in case of low energy implants [5]. Furthermore, in case of high dose implants at high energy buried amorphous layers can be produced which implies annealing of damage from two fronts [6]. This is contrary to the annealing behaviour of amorphized layers produced by high dose implants at low energy [7]. We have shown in earlier work [8,9] that doping profiles which are highly uniform across
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