Infrared luminescence properties of bismuth-doped barium silicate glasses
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anrong Qiua) State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People’s Republic of China
Danping Chen State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China
Chen Wang State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China; and Graduate School of the Chinese Academy of Sciences, Beijing 100080, People’s Republic of China
Xiongwei Jiang and Congshan Zhu State Key Laboratory for High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People’s Republic of China (Received 28 September 2006; accepted 29 March 2007)
Infrared (IR) luminescence covering 1.1 to ∼1.6 m wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 s, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.
I. INTRODUCTION
With the arrival of the information age, development of the wavelength division multiplexing (WDM) system with higher capacity and faster bit rate will be imperative. The transmittability of the WDM system depends on the bandwidth of optical fiber amplifiers and tunable lasers. Unfortunately, the bandwidth of traditional rareearth ions doped fiber amplifiers is less than 100 nm since the f–f transitions of rare-earth ions are confined in the inner-shells, which are insensitive to local environments.1 To expand the width of fiber amplifiers, Raman fiber amplifiers (RFA) have been developed. However, they need pump light with high power and a multiwavelength excitation source. In addition, people have integrated optical fiber amplifiers in different amplifying regions to expand the amplification width, but the connec-
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Address all correspondence to this author. e-mail: [email protected] DOI: 10.1557/JMR.2007.0245 1954
J. Mater. Res., Vol. 22, No. 7, Jul 2007
tion of different fiber system is difficult and would result in serious signal loss. In fact, even all the developed fiber amplifiers are integrated to expand the amplification width, full amplification of the all-optical communication window still cannot be realized. Therefore, it is significant to explore novel materials that can be realized full amplification (1200–1650 nm) excited by a single pump source. Recently, Fujimoto et al. have reported infrared (IR) luminescence covering 1000 to ∼1600 nm region from bismuth-doped glasses at room temperature and realized 1
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