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InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

F. Ren, C. R. Abernathy, S. J. Pearton, P. W. Wisk and R. Esagui, AT&T Bell Laboratories, Murray Hill, New Jersey 07974

Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 l.Lm) exhibited gain of 25 for high injection levels at a base doping of 5 x 1019 cm- 3 . Ideality factors (

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