Interface characteristics affecting electrical properties of Y-doped SiC

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H-J. Kleebe Colorado School of Mines, Metallurgical and Materials Engineering Department, Golden, Colorado 80401

L.S. Sigl Wacker Ceramics, D-87437 Kempten, Germany (Received 22 November 2002; accepted 1 August 2003)

Liquid-phase sintered SiC, doped with 3 vol% AlN, Al2OC, Y3Al5O12, revealed a variation in electrical resistivity of more than five orders of magnitude (