Intersubband Transitions in Proton Irradiated InGaAs/InAlAs Multiple Quantum Wells Grown on Lattice Matched InP Substrat
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INTERSUBBAND TRANSITIONS IN PROTON IRRADIATED InGaAs/InAlAs MULTIPLE QUANTUM WELLS GROWN ON LATTICE MATCHED InP SUBSTRATE Qiaoying Zhou*, M. O. Manasreh*, B. D. Weaver**, and M. Missous*** * Depart of Electrical & Computer Engineering, The University of New Mexico, Albuquerque, NM 87131-1356. **Naval Research Lab, 4555 Overlook Ave., SW, Washington, DC 20375. *** Department of Electrical Engineering and Electronics, UMIST, P. O. BOX 88, Manchester M60 1QD, England, UK.
ABSTRACT Radiation hardness on intersubband transition in proton-irradiated InGaAs/InAlAs multiple quantum wells is investigated using Fourier transform infrared absorption (FTIR) technique and compared to the results observed for the GaAs/AlGaAs multiple quantum wells. It is observed that the intersubband transition remains almost unchanged in samples irradiated with 1 MeV protons and with doses as high as 1x1014 cm-2. This dose on the other hand, was found to completely deplete the intersubband transition in GaAs/AlGaAs multiple quantum wells samples. The intersubband transition in InGaAs/InAlAs multiple quantum wells was almost washed out in samples irradiated with doses as high as 3x1015 cm-2. The partial thermal annealing recovery of the depleted intersubband transition in the proton irradiated InGaAs/InAlAs multiple quantum wells will be reported.
INTRODUCTION Intersubband transitions in III-V semiconductor multiple quantum wells have been the subject of many studies [1-3] due to the fact that they form the basis of a new generation of long and very long wavelength infrared detectors. During many semiconductor-processing steps, the devices are intentionally or unintentionally exposed to a variety of particles with energies ranging from a few eV to several MeV [4,5]. Thus, it is necessary to investigate the intersubband transitions under the influence of radiation effects and radiation hardness on electronic and optoelectronic materials and devices. Irradiation effects on the intersubband transitions in GaAs/AlGaAs multiple quantum wells and related compounds have received much attention [6-10] since the GaAs/AlGaAs multiple quantum well structures are the most mature of quantum well structures. On the other hand, the reports on the irradiation effects in InGaAs/InAlAs multiple quantum wells are rare. Proton irradiation effect [8] on the intersubband transitions in GaAs/AlGaAs multiple quantum wells shows that the intensity of the intersubband transitions is decreased as the proton irradiation dose is increased. This was explained in terms of trapping of the two-dimensional electron gas in the GaAs quantum wells by irradiation-induced defects such as vacancies, antisites, and more complex defects. Based on this result, the behavior of intersubband transitions in InGaAs/InAlAs
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multiple quantum wells is investigated as a function of 1 MeV proton irradiation dose and thermal annealing temperature. In this letter, we report on the optical properties of intersubband transitions in proton irradiated InGaAs/InAlAs multiple quantum
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