Intrinsic ferromagnetism in 4H-SiC single crystal induced by Al-doping
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Intrinsic ferromagnetism in 4H‑SiC single crystal induced by Al‑doping Zesheng Zhang1,2 · Long Chen1,2 · Jun Deng1,2 · Guobin Wang1,2 · Yanpeng Song1,2 · Jiangang Guo1 · Wenjun Wang1,2,3 · Xiaolong Chen1,2,3,4 Received: 9 May 2020 / Accepted: 8 August 2020 © Springer-Verlag GmbH Germany, part of Springer Nature 2020
Abstract SiC single crystals with varying Al doping concentrations are grown through top-seeded solution growth method to explore the intrinsic magnetism upon non-magnetic element doping. Ferromagnetism is detected in all Al-doped crystals, where an enhancement in magnetization and magnetic anisotropy upon increasing concentrations of Al doping is observed. The coercive force and magnetic remanence enhance with increasing Al-concentration while the Curie temperatures fluctuate around 30 K. Anisotropy in magnetic hysteresis is observed when the applied magnetic field is going from perpendicular to parallel to the (0 0 0 1) plane. Based on the measured carrier concentrations and the proposed structural models of Al dopant plus Si vacancies, we claim that the extra free carriers introduced by Si vacancies around Al atoms are vital to the emergence of the ferromagnetism in SiC. Keywords SiC single crystal · Diluted magnetic semiconductor · Al-doped
1 Introduction Diluted magnetic semiconductors (DMSs) have been intensively investigated over the past two decades due to the advantage of integrating charge and spin degree of electron [1–4], providing a wider room for developing semiconductor technology. DMSs are usually realized by doping magnetic
Electronic supplementary material The online version of this article (https://doi.org/10.1007/s00339-020-03898-4) contains supplementary material, which is available to authorized users. * Xiaolong Chen [email protected] Wenjun Wang [email protected] 1
Research and Development Center for Functional Crystals, Laboratory of Advanced Materials and Electron Microscopy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
3
Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
4
Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
3d metals into semiconductors. Earlier studies found that DMSs generally exhibit relatively low Curie temperatures (Tc) far below room temperature, hampering practical applications of them [5–7]. In 2001, Matsumoto and coworkers [8] reported that a much higher Tc above 400 K was observed in 7 at.% Co doped anatase T iO2 thin film. From then on, many researches on the high temperature ferromagnetism (FM) of 3d metal doped thin films and nanomaterials were performed [9–14]. Notably, it is found that the magnetism is very sensitive to the surface/interface states, and the 3d metal doping may not be essential for inducing magnetism [15–20]. As we know, wide bandgap (WBG) semiconductors are intensively studied as they have promising applications
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